EPE Association: EPE 2023 - DS2d: Reliability & Life-Time

EPE 2023 - DS2d: Reliability & Life-Time
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - DS2d: Reliability & Life-Time

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   Comparison of a Power Cycling Test using Repetitive Unclamped Inductive Switching for Heat Generation with the DC Power Cycling Test
By James ABUOGO, Christian SCHWABE, Josef LUTZ, Thomas BASLER [View]
[Download]

Abstract: A power cycling test using repetitive unclamped inductive switching to generate heat is applied on low voltage silicon MOSFETs. The motivation of this approach is to introduce avalanche-generated losses, besides the conduction losses, so that the required load current can be reduced. This is important in testing low voltage MOSFETs, whereby the small on-state resistance often demands that the rated current be exceeded to achieve the desired temperature swing. The performance of this test approach is compared to that of a classical DC power cycling test in body-diode mode. The results obtained from these two tests - both lifetimes and failure modes - are found to be similar. The switching test required only 42\% of the load current of the DC test. The static parameters of the devices deployed in both tests also showed similar changes.

   Functionality, Losses, and Lifetime Comparison of Hydropower Generator Excitation System Converters
By Chengjun TANG, Torbjörn THIRINGER [View]
[Download]

Abstract: This paper examines different types of converters used in an excitation system of a hydropowergenerator. The investigation focuses on the functionality, losses, and lifetime considerations. Although both the two-level converter and the three-level neutral point clamped converter can deliver a consistent DC voltage to the field winding of the excitation system, the converter using Silicon Carbide MOSFET power switches has advantages, it demonstrates superior performance in terms of losses and lifetime. On the other hand, the three-level NPC converter proves to be a viable choice in scenarios where field current distortion or high voltage level requirements are present.

   Improving Power Cycle Lifetime of SiC Power Modules with Double-Bonded Wire: Experimental and Simulation Analysis
By Enyao XIANG, Haoze LUO, Huan YANG, Xiangning HE, Naoto FUJISHIMA, Haruhiko NISHIO, Hitoshi SUMIDA [View]
[Download]

Abstract: The trend of using silicon carbide power modules is driven by applications in traction, electric vehicles, and renewable energy generation. However, higher power density and temperature pose more severe challenges to the reliability of wire bonds in the package. This paper investigates the effects of geometric parameters on wire bond reliability through a comparison of single and double bonds and finds that double bonding can significantly enhance the thermal-mechanical performance of bonding wire.

   Reliability Study on Front-end Capacitors in Boost PFC Architectures
By Alex MUSETTI, Hossein SADEGH LAFMEJANI, Alessandro SOLDATI [View]
[Download]

Abstract: Single-phase line rectifiers usually implement a PFC front-end to reduce the input current distortion; Power factor correction is often implemented using a boost converter. This topology demands bulky electrolytic capacitors necessary to achieve unity power factor and low output voltage ripple while maintaining restrained volumes, thereby reducing system lifetime since electrolytic capacitor is one of the main causes of failure in power electronics. An alternative control of the PFC boost converter allows reducing the required capacitance and enables the electrolytic capacitor substitution with a long-life low-ESR film one, reaching high power factor and low output voltage ripple. In this study, a thermo-electric model of the two different PFC methods allowed us to analyze the system behavior. Employing two commercial capacitors, an electrolytic and a film type, a full lifetime model has been derived, from which emerges that film capacitor lifetime is almost two times longer compared to electrolytic one.

   SiC Power TrenchMOS Transistor under harsh repetitive switching conditions
By Juraj MAREK, Michal MINARIK, Matej MATUS, Jozef KOZARIK, Lubica STUCHLIKOVA [View]
[Download]

Abstract: We investigate the reliability of 1.2kV 4H-SiC MOSFETs under repeated unclamped inductive switching (UIS) and short-circuit I and II conditions. The stress-induced degradation of device characteristics, including output and transfer characteristics and drain leakage current, was analyzed. Repeated Short Circuit stress was performed for VBUSS = 600V. A repetitive UIS test was performed for 1mH inductive load. Degradation of most of the electrical parameters was observed after relatively short stress. During stress testing, hot carriers in the channel region are injected into the gate oxide, where they are trapped in existing defects or create new ones. This is thought to be responsible for the variation in electrical parameters. Charge trapping is also indicated by a significant change in switching times. The trapping effects were analyzed using the DLTFS method.

   Thermal Analysis of Aluminum Electrolytic Capacitors Considering the Insulation Resistance
By Bo YAO, Xing WEI, Yichi ZHANG, Qian WANG, Haoran WANG, Huai WANG [View]
[Download]

Abstract: A thermal analysis method for aluminum electrolytic capacitors considering the effect of insulation resistance is proposed in this paper, and its thermal stress model with the introduction of both series resistance and insulation resistance is given. According to experimental tests, the results illustrate the non-negligible effect of insulation resistance on capacitance loss and temperature when the aluminum electrolytic capacitor is operated in the high-voltage and high-temperature environment.

   Thermal cycling characterization of integrated GaN power module
By Zhongchao SUN, Masaki TAKAHASHI, Stig MUNK-NIELSEN, Asger Bjørn JØRGENSEN [View]
[Download]

Abstract: A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.

EPE 2023 - DS2d: Reliability & Life-Time
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - DS2d: Reliability & Life-Time
	[return to parent folder]

	Comparison of a Power Cycling Test using Repetitive Unclamped Inductive Switching for Heat Generation with the DC Power Cycling Test By James ABUOGO, Christian SCHWABE, Josef LUTZ, Thomas BASLER	[View] [Download]
Abstract: A power cycling test using repetitive unclamped inductive switching to generate heat is applied on low voltage silicon MOSFETs. The motivation of this approach is to introduce avalanche-generated losses, besides the conduction losses, so that the required load current can be reduced. This is important in testing low voltage MOSFETs, whereby the small on-state resistance often demands that the rated current be exceeded to achieve the desired temperature swing. The performance of this test approach is compared to that of a classical DC power cycling test in body-diode mode. The results obtained from these two tests - both lifetimes and failure modes - are found to be similar. The switching test required only 42\% of the load current of the DC test. The static parameters of the devices deployed in both tests also showed similar changes.

	Functionality, Losses, and Lifetime Comparison of Hydropower Generator Excitation System Converters By Chengjun TANG, Torbjörn THIRINGER	[View] [Download]
Abstract: This paper examines different types of converters used in an excitation system of a hydropowergenerator. The investigation focuses on the functionality, losses, and lifetime considerations. Although both the two-level converter and the three-level neutral point clamped converter can deliver a consistent DC voltage to the field winding of the excitation system, the converter using Silicon Carbide MOSFET power switches has advantages, it demonstrates superior performance in terms of losses and lifetime. On the other hand, the three-level NPC converter proves to be a viable choice in scenarios where field current distortion or high voltage level requirements are present.

	Improving Power Cycle Lifetime of SiC Power Modules with Double-Bonded Wire: Experimental and Simulation Analysis By Enyao XIANG, Haoze LUO, Huan YANG, Xiangning HE, Naoto FUJISHIMA, Haruhiko NISHIO, Hitoshi SUMIDA	[View] [Download]
Abstract: The trend of using silicon carbide power modules is driven by applications in traction, electric vehicles, and renewable energy generation. However, higher power density and temperature pose more severe challenges to the reliability of wire bonds in the package. This paper investigates the effects of geometric parameters on wire bond reliability through a comparison of single and double bonds and finds that double bonding can significantly enhance the thermal-mechanical performance of bonding wire.

	Reliability Study on Front-end Capacitors in Boost PFC Architectures By Alex MUSETTI, Hossein SADEGH LAFMEJANI, Alessandro SOLDATI	[View] [Download]
Abstract: Single-phase line rectifiers usually implement a PFC front-end to reduce the input current distortion; Power factor correction is often implemented using a boost converter. This topology demands bulky electrolytic capacitors necessary to achieve unity power factor and low output voltage ripple while maintaining restrained volumes, thereby reducing system lifetime since electrolytic capacitor is one of the main causes of failure in power electronics. An alternative control of the PFC boost converter allows reducing the required capacitance and enables the electrolytic capacitor substitution with a long-life low-ESR film one, reaching high power factor and low output voltage ripple. In this study, a thermo-electric model of the two different PFC methods allowed us to analyze the system behavior. Employing two commercial capacitors, an electrolytic and a film type, a full lifetime model has been derived, from which emerges that film capacitor lifetime is almost two times longer compared to electrolytic one.

	SiC Power TrenchMOS Transistor under harsh repetitive switching conditions By Juraj MAREK, Michal MINARIK, Matej MATUS, Jozef KOZARIK, Lubica STUCHLIKOVA	[View] [Download]
Abstract: We investigate the reliability of 1.2kV 4H-SiC MOSFETs under repeated unclamped inductive switching (UIS) and short-circuit I and II conditions. The stress-induced degradation of device characteristics, including output and transfer characteristics and drain leakage current, was analyzed. Repeated Short Circuit stress was performed for VBUSS = 600V. A repetitive UIS test was performed for 1mH inductive load. Degradation of most of the electrical parameters was observed after relatively short stress. During stress testing, hot carriers in the channel region are injected into the gate oxide, where they are trapped in existing defects or create new ones. This is thought to be responsible for the variation in electrical parameters. Charge trapping is also indicated by a significant change in switching times. The trapping effects were analyzed using the DLTFS method.

	Thermal Analysis of Aluminum Electrolytic Capacitors Considering the Insulation Resistance By Bo YAO, Xing WEI, Yichi ZHANG, Qian WANG, Haoran WANG, Huai WANG	[View] [Download]
Abstract: A thermal analysis method for aluminum electrolytic capacitors considering the effect of insulation resistance is proposed in this paper, and its thermal stress model with the introduction of both series resistance and insulation resistance is given. According to experimental tests, the results illustrate the non-negligible effect of insulation resistance on capacitance loss and temperature when the aluminum electrolytic capacitor is operated in the high-voltage and high-temperature environment.

	Thermal cycling characterization of integrated GaN power module By Zhongchao SUN, Masaki TAKAHASHI, Stig MUNK-NIELSEN, Asger Bjørn JØRGENSEN	[View] [Download]
Abstract: A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.