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   Thermal cycling characterization of integrated GaN power module   [View] 
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 Author(s)   Zhongchao SUN, Masaki TAKAHASHI, Stig MUNK-NIELSEN, Asger Bjørn JØRGENSEN 
 Abstract   A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation. 
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Filename:0024-epe2023-full-12503063.pdf
Filesize:4.157 MB
 Type   Members Only 
 Date   Last modified 2023-09-24 by System