EPE Association: EPE 2020 - DS2a-2: Active Devices and Components-2

EPE 2020 - DS2a-2: Active Devices and Components-2
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS2a-2: Active Devices and Components-2

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   A Design of High-Power Inverter Circuit Including GaN Power Devices
By Takashi SAWADA [View]
[Download]

Abstract: GaN power conversion circuits need to avoid overheating. This paper describes the design of inverter circuits including GaN power devices, focusing on dual cooling systems. and proposes DC-DC converter circuit which achieves the operation of up to 13kW.

   A New GaN Hybrid Resonant-Clamping Gate driver For High Frequency SiC MOSFETs
By Ziyue DANG [View]
[Download]

Abstract: Conventional resonant gate driver suffers from significant reverse recovery loss due to the usage of Si devices, especially at high frequencies. A novel hybrid resonant gate driver is proposed in this design composed by two hybrid GaN HEMT and Schottky diode half bridges. The hybrid topology merges the merits of efficient resonant turn on and ultra-fast turn off by GaN. The GaN based hybrid resonant-clamping gate driver achieves 29\% reduction in gate driver active area. It also has 49.3\% reduction in power loss is achieved compared with Si full bridge resonant gate driver.

   Comparison of Press-Pack and Wire-Bonding Techniques for SiC MOSFETs under Short-Circuit Conditions
By Ran YAO [View]
[Download]

Abstract: This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

   Faster switching with less overvoltage - operating a SiC-MOSFET at its speed limit
By Pablo RODRIGUEZ DE MORA [View]
[Download]

Abstract: This paper explores the turn-off switching behavior of a third-generation SiC MOSFET encapsulated ina TO-247-4 package. The work is focused on the selection of the optimal gate resistance to reduce theturn-off switching losses. The selection criteria is based on the limitation of the inductive over-voltagepeak (OVPK) for the worst-case scenario i.e. maximum DC-link voltage and switched current. The gateresistance is tuned to induce the allowed OVPK, gradually, with decreasing gate resistance the switchinglosses would be reduced but the OVPK would increase. Contrary to the expected behavior, it is observedthat there exists a threshold value from which, the decrease of the gate resistor reduces the OVPK and, moreover, the turn-off losses do also decrease.

   Optimization Design for SiC Drift Step Recovery Diode (DSRD)
By Xiaoxue YAN [View]
[Download]

Abstract: A device structure optimization method is proposed for silicon carbide (SiC) DSRD. The bulk structure is determined by analyzing the influence of each structure parameter on the performance. For the termination structure, the 3-step etched-JTE is applied for the DSRD for the first time. The optimally designed 3-step JTE effectively reduces the peak electric field from 2.73 MV/cm to 0.95 MV/cm. In addition, the preparation process technology especially the microtrench phenomenon of SiC materials in inductively coupled plasma (ICP) etching is also studied. The samples with 1.2 kV breakdown voltage are fabricated and tested in the pulsed generation circuit.

   Switching Behavior and Comparison of 600V SMD Wide Bandgap Power Devices
By Markus MEISSNER [View]
[Download]

Abstract: This Paper compares the switching characteristics of silicon, silicon carbide and gallium nitride based semiconductor power devices over a wide operating range. Several 600V SMD packaged devices are measured in a similar test setup. To consider different RDSon values a switching figure of merit (FOM) is used. The investigations focus on the switching losses, the presented FOM and the dv/dt during the switching process.

EPE 2020 - DS2a-2: Active Devices and Components-2
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS2a-2: Active Devices and Components-2
	[return to parent folder]

	A Design of High-Power Inverter Circuit Including GaN Power Devices By Takashi SAWADA	[View] [Download]
Abstract: GaN power conversion circuits need to avoid overheating. This paper describes the design of inverter circuits including GaN power devices, focusing on dual cooling systems. and proposes DC-DC converter circuit which achieves the operation of up to 13kW.

	A New GaN Hybrid Resonant-Clamping Gate driver For High Frequency SiC MOSFETs By Ziyue DANG	[View] [Download]
Abstract: Conventional resonant gate driver suffers from significant reverse recovery loss due to the usage of Si devices, especially at high frequencies. A novel hybrid resonant gate driver is proposed in this design composed by two hybrid GaN HEMT and Schottky diode half bridges. The hybrid topology merges the merits of efficient resonant turn on and ultra-fast turn off by GaN. The GaN based hybrid resonant-clamping gate driver achieves 29\% reduction in gate driver active area. It also has 49.3\% reduction in power loss is achieved compared with Si full bridge resonant gate driver.

	Comparison of Press-Pack and Wire-Bonding Techniques for SiC MOSFETs under Short-Circuit Conditions By Ran YAO	[View] [Download]
Abstract: This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

	Faster switching with less overvoltage - operating a SiC-MOSFET at its speed limit By Pablo RODRIGUEZ DE MORA	[View] [Download]
Abstract: This paper explores the turn-off switching behavior of a third-generation SiC MOSFET encapsulated ina TO-247-4 package. The work is focused on the selection of the optimal gate resistance to reduce theturn-off switching losses. The selection criteria is based on the limitation of the inductive over-voltagepeak (OVPK) for the worst-case scenario i.e. maximum DC-link voltage and switched current. The gateresistance is tuned to induce the allowed OVPK, gradually, with decreasing gate resistance the switchinglosses would be reduced but the OVPK would increase. Contrary to the expected behavior, it is observedthat there exists a threshold value from which, the decrease of the gate resistor reduces the OVPK and, moreover, the turn-off losses do also decrease.

	Optimization Design for SiC Drift Step Recovery Diode (DSRD) By Xiaoxue YAN	[View] [Download]
Abstract: A device structure optimization method is proposed for silicon carbide (SiC) DSRD. The bulk structure is determined by analyzing the influence of each structure parameter on the performance. For the termination structure, the 3-step etched-JTE is applied for the DSRD for the first time. The optimally designed 3-step JTE effectively reduces the peak electric field from 2.73 MV/cm to 0.95 MV/cm. In addition, the preparation process technology especially the microtrench phenomenon of SiC materials in inductively coupled plasma (ICP) etching is also studied. The samples with 1.2 kV breakdown voltage are fabricated and tested in the pulsed generation circuit.

	Switching Behavior and Comparison of 600V SMD Wide Bandgap Power Devices By Markus MEISSNER	[View] [Download]
Abstract: This Paper compares the switching characteristics of silicon, silicon carbide and gallium nitride based semiconductor power devices over a wide operating range. Several 600V SMD packaged devices are measured in a similar test setup. To consider different RDSon values a switching figure of merit (FOM) is used. The investigations focus on the switching losses, the presented FOM and the dv/dt during the switching process.