| Abstract |
This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions. |
