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Switching Behavior and Comparison of 600V SMD Wide Bandgap Power Devices
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| Author(s) |
Markus MEISSNER |
| Abstract |
This Paper compares the switching characteristics of silicon, silicon carbide and gallium nitride based semiconductor power devices over a wide operating range. Several 600V SMD packaged devices are measured in a similar test setup. To consider different RDSon values a switching figure of merit (FOM) is used. The investigations focus on the switching losses, the presented FOM and the dv/dt during the switching process. |
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| Filename: | 0292-epe2020-full-10082323.pdf |
| Filesize: | 1.652 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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