EPE Association: 16 - Madep - M4.3 - HIGH POWER DEVICES 02

16 - Madep - M4.3 - HIGH POWER DEVICES 02
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 16 - Madep - M4.3 - HIGH POWER DEVICES 02

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   Losses Evaluation in High-Power Devices PWM Inverter Motor Drives
By A. Boglietti; P. Ferraris; F. Profumo [View]
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Abstract: The calculation of power losses in high-power devices (BJTs, IGBTs, SIRETs) is examined for PWM inverter motor drives applications. The magnitude of switching and conduction losses is dependent on the power devices characteristics, the switching frequency and the type of load. Starting from the classical single shut turn-on and turn-off tests on the power modules, the parameters of the main switches and the freewheeling diodes are measured. The inverter losses are calculated taking into account the main switches measured data (included the dynamic saturation for BJTs), the diodes recovery characteristics and the load characteristics.

   IMPROVED BLOCKING VOLTAGE OF POWER THYRISTORS BY LOCAL VARIATION OF THE CURRENT GAIN
By H. J. Schulze; H. Mitlehner [View]
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Abstract: A novel technique for improving the blocking capability of thyristors is shown. It is demonstrated that the blocking voltage can be increased by keeping the current gain of the thyristor as low as possible in the region of the junction termination. This is realized by electron irradiation masking the central device region with metal shields.

   INNOVATIVE SILICON/HEAT-SINK JOINING TECHNIQUES FOR LARGE-AREA HIGH-POWER SEMICONDUCTOR DEVICES
By D. E. Crees; F. Fasce; G. Humpston; D. M. Jacobson; D. R. Newcombe; M. Zambelli [View]
[Download]

Abstract: The fabrication process that is currently used for attaching high-power silicon devices to heat-sinks limit their performance and present an obstacle to the development of new devices with improved specifications. This study analysed in detail the constraints imposed by the existing bonding processes as the first step towards improving the existing technology. Having achieved this goal, more radical changes to the fabrication of powerdevice/heat-sink assemblies were evaluated. Two aspects were studied. The first involved the development of Iower melting point filler metals and suitable processes for applying them to joining silicon to heat-sink materials and the other focussed on alternative heat-sink materials and configurations. The most fruitful solution that was achieved was a diffusion soldering process based on silver with either tin or indium, that can be carried out at temperatures as low as 175°C, with the joints retaining their integrity to subsequent temperature excursions to 500°C and above. Another promising avenue that was demonstrated at the feasibility stage involved a new low melting point aluminium alloy braze.

   A CONTRIBUTION OF SMALL-SIGNAL CURRENT GAINS FREQUENCY DEPENDENCE INVESTIGATION TO OVERALL DIAGNOSTICS OF THE GTO THYRISTOR: SIMULATION AND MEASUREMENT
By M. Hátle; J. Vobecky [View]
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Abstract: An approach to the simulation of the small-signal current gains vs. frequency in arrangement of real measuring circuit is proposed. For this purpose an exact 1-D mathematical model is used. The influence of the extrapolated p-base doping Cpj on alphas is shown in a wide range of Cpj. It is further shown that for some value of Cpj the lifetime independent value of the alpha-npn/alpha-pnp ratio may be found. The influence of the localised lifetime control, e.g. proton irradiation, is presented in the light of the irradiation dose and stop-layer location. The linkage of simulated and measured data for the case of GTO is demonstrated by means of the computer-controlled high-frequency measuring system of alpha modulus vs. frequency. Investigations showed high sensitivity of alpha's magnitude to any device and/or technological parameters.

   High Power Schottky Module Design Improves Effeciency And Reliability
By Sam Anderson; William C. Roman; Jarvis Carter [View]
[Download]

Abstract: Improving the overall ruggedness of high current Schottky Rectifiers both to electrical and mechanical sources of stress is highly desirable. The electrical ruggedness performance can be achieved by designing for controlled avalanche energy capability. The mechanical ruggedness may be achieved by understanding the sources of stress transferred to the silicon chip housed in the package and optimization of package design to reduce the total stress transferred to the silicon from the application via the packaging material. Also reduction in any sources of variation in the manufacturing process that may induce internal stresses from the package is also considered in this paper.

   GaAs DEVICES FOR LOW LOSS POWER RECTIFICATION
By S. J. Anderson; L. V. Munukutla [View]
[Download]

Abstract: GaAs Schottky rectifiers were fabricated using vapor phase epitaxy. Metal contacts to the GaAs surface were formed using standard sputtering technology. The vertical structure of the Schottky rectifier was designed to support voltages up to 200 volts reverse blocking. In parallel equivalent silicon rectifiers were processed side by side for comparison. The switching speed performance of the GaAs Schottky rectifiers was found to be better by an order of magnitude compared to the standard silicon rectifiers.

16 - Madep - M4.3 - HIGH POWER DEVICES 02
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 16 - Madep - M4.3 - HIGH POWER DEVICES 02
	[return to parent folder]

	Losses Evaluation in High-Power Devices PWM Inverter Motor Drives By A. Boglietti; P. Ferraris; F. Profumo	[View] [Download]
Abstract: The calculation of power losses in high-power devices (BJTs, IGBTs, SIRETs) is examined for PWM inverter motor drives applications. The magnitude of switching and conduction losses is dependent on the power devices characteristics, the switching frequency and the type of load. Starting from the classical single shut turn-on and turn-off tests on the power modules, the parameters of the main switches and the freewheeling diodes are measured. The inverter losses are calculated taking into account the main switches measured data (included the dynamic saturation for BJTs), the diodes recovery characteristics and the load characteristics.

	IMPROVED BLOCKING VOLTAGE OF POWER THYRISTORS BY LOCAL VARIATION OF THE CURRENT GAIN By H. J. Schulze; H. Mitlehner	[View] [Download]
Abstract: A novel technique for improving the blocking capability of thyristors is shown. It is demonstrated that the blocking voltage can be increased by keeping the current gain of the thyristor as low as possible in the region of the junction termination. This is realized by electron irradiation masking the central device region with metal shields.

	INNOVATIVE SILICON/HEAT-SINK JOINING TECHNIQUES FOR LARGE-AREA HIGH-POWER SEMICONDUCTOR DEVICES By D. E. Crees; F. Fasce; G. Humpston; D. M. Jacobson; D. R. Newcombe; M. Zambelli	[View] [Download]
Abstract: The fabrication process that is currently used for attaching high-power silicon devices to heat-sinks limit their performance and present an obstacle to the development of new devices with improved specifications. This study analysed in detail the constraints imposed by the existing bonding processes as the first step towards improving the existing technology. Having achieved this goal, more radical changes to the fabrication of powerdevice/heat-sink assemblies were evaluated. Two aspects were studied. The first involved the development of Iower melting point filler metals and suitable processes for applying them to joining silicon to heat-sink materials and the other focussed on alternative heat-sink materials and configurations. The most fruitful solution that was achieved was a diffusion soldering process based on silver with either tin or indium, that can be carried out at temperatures as low as 175°C, with the joints retaining their integrity to subsequent temperature excursions to 500°C and above. Another promising avenue that was demonstrated at the feasibility stage involved a new low melting point aluminium alloy braze.

	A CONTRIBUTION OF SMALL-SIGNAL CURRENT GAINS FREQUENCY DEPENDENCE INVESTIGATION TO OVERALL DIAGNOSTICS OF THE GTO THYRISTOR: SIMULATION AND MEASUREMENT By M. Hátle; J. Vobecky	[View] [Download]
Abstract: An approach to the simulation of the small-signal current gains vs. frequency in arrangement of real measuring circuit is proposed. For this purpose an exact 1-D mathematical model is used. The influence of the extrapolated p-base doping Cpj on alphas is shown in a wide range of Cpj. It is further shown that for some value of Cpj the lifetime independent value of the alpha-npn/alpha-pnp ratio may be found. The influence of the localised lifetime control, e.g. proton irradiation, is presented in the light of the irradiation dose and stop-layer location. The linkage of simulated and measured data for the case of GTO is demonstrated by means of the computer-controlled high-frequency measuring system of alpha modulus vs. frequency. Investigations showed high sensitivity of alpha's magnitude to any device and/or technological parameters.

	High Power Schottky Module Design Improves Effeciency And Reliability By Sam Anderson; William C. Roman; Jarvis Carter	[View] [Download]
Abstract: Improving the overall ruggedness of high current Schottky Rectifiers both to electrical and mechanical sources of stress is highly desirable. The electrical ruggedness performance can be achieved by designing for controlled avalanche energy capability. The mechanical ruggedness may be achieved by understanding the sources of stress transferred to the silicon chip housed in the package and optimization of package design to reduce the total stress transferred to the silicon from the application via the packaging material. Also reduction in any sources of variation in the manufacturing process that may induce internal stresses from the package is also considered in this paper.

	GaAs DEVICES FOR LOW LOSS POWER RECTIFICATION By S. J. Anderson; L. V. Munukutla	[View] [Download]
Abstract: GaAs Schottky rectifiers were fabricated using vapor phase epitaxy. Metal contacts to the GaAs surface were formed using standard sputtering technology. The vertical structure of the Schottky rectifier was designed to support voltages up to 200 volts reverse blocking. In parallel equivalent silicon rectifiers were processed side by side for comparison. The switching speed performance of the GaAs Schottky rectifiers was found to be better by an order of magnitude compared to the standard silicon rectifiers.