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A CONTRIBUTION OF SMALL-SIGNAL CURRENT GAINS FREQUENCY DEPENDENCE INVESTIGATION TO OVERALL DIAGNOSTICS OF THE GTO THYRISTOR: SIMULATION AND MEASUREMENT
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| Author(s) |
M. Hátle; J. Vobecky |
| Abstract |
An approach to the simulation of the small-signal current gains vs. frequency in arrangement of real measuring circuit is proposed. For this purpose an exact 1-D mathematical model is used. The influence of the extrapolated p-base doping Cpj on alphas is shown in a wide range of Cpj. It is further shown that for some value of Cpj the lifetime independent value of the alpha-npn/alpha-pnp ratio may be found. The influence of the localised lifetime control, e.g. proton irradiation, is presented in the light of the irradiation dose and stop-layer location. The linkage of simulated and measured data for the case of GTO is demonstrated by means of the computer-controlled high-frequency measuring system of alpha modulus vs. frequency. Investigations showed high sensitivity of alpha's magnitude to any device and/or technological parameters. |
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| Filename: | Unnamed file |
| Filesize: | 2.193 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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