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INNOVATIVE SILICON/HEAT-SINK JOINING TECHNIQUES FOR LARGE-AREA HIGH-POWER SEMICONDUCTOR DEVICES
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| Author(s) |
D. E. Crees; F. Fasce; G. Humpston; D. M. Jacobson; D. R. Newcombe; M. Zambelli |
| Abstract |
The fabrication process that is currently used for attaching high-power silicon devices to heat-sinks limit their performance and present an obstacle to the development of new devices with improved specifications. This study analysed in detail the constraints imposed by the existing bonding processes as the first step towards improving the existing technology. Having achieved this goal, more radical changes to the fabrication of powerdevice/heat-sink assemblies were evaluated. Two aspects were studied. The first involved the development of Iower melting point filler metals and suitable processes for applying them to joining silicon to heat-sink materials and the other focussed on alternative heat-sink materials and configurations. The most fruitful solution that was achieved was a diffusion soldering process based on silver with either tin or indium, that can be carried out at temperatures as low as 175°C, with the joints retaining their integrity to subsequent temperature excursions to 500°C and above. Another promising avenue that was demonstrated at the feasibility stage involved a new low melting point aluminium alloy braze. |
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| Filename: | Unnamed file |
| Filesize: | 4.129 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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