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GaAs DEVICES FOR LOW LOSS POWER RECTIFICATION
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| Author(s) |
S. J. Anderson; L. V. Munukutla |
| Abstract |
GaAs Schottky rectifiers were fabricated using vapor phase epitaxy. Metal contacts to the GaAs surface were formed using standard sputtering technology. The vertical structure of the Schottky rectifier was designed to support voltages up to 200 volts reverse blocking. In parallel equivalent silicon rectifiers were processed side by side for comparison. The switching speed performance of the GaAs Schottky rectifiers was found to be better by an order of magnitude compared to the standard silicon rectifiers. |
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| Filename: | Unnamed file |
| Filesize: | 2.254 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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