EPE Association: 12 - Madep - M3.2

12 - Madep - M3.2 - DEVICES MODELING 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 12 - Madep - M3.2 - DEVICES MODELING 01

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   A new generation of circuit simulators makes power MOSFET models simple
By P. Türkes; H. J. Mattausch [View]
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Abstract: The accuracy in the simulation of a power MOSFET switching behaviour is mainly determined by a correct modelling of the voltage dependent gate drain capacitance and of the voltage dependent drain resistance modulation. A new approach of modelling SIPMOS power transistors, paying attention to these issues and keeping the overall model structure as well as the parameter extraction routine simple, is given. The voltage dependencies within this SIPMOS model are mathematically formulated and implemented into the simulator SABER. The modelling results are compared to actual measurements, for the verification of the validity of the model approximations.

   ANALYSES OF HIGHLY DOPED SEMICONDUCTOR DEVICE REGIONS WITH VARIOUS MODELS
By S. Sokolic; S. Amon; F. Smole [View]
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Abstract: Paper presents a one-dimensional analysis of bipolar NPN transistor for the case of thermal equilibrium applying different models for highly doped regions. A general method enabling an efficient comparison of the described models is presented. Some transistor properties of interest, such as built-in field and minority carrier concentration, were calculated. The results obtained for different models describing heavily doping phenomena to different level of accuracy are discussed. Complicated time consuming methods (direct inclusion of band tails) are compared with simpler approaches considering appropriate expressions for BGN, transferable to the effective intrinsic concentration and suitable for advanced device modeling.

   A SPICE MODEL FOR THE ACCURATE SIMULATION OF A POWER MOSFET DURING SWITCHING
By J. Shen; P. R. Palmer [View]
[Download]

Abstract: A new model of power MOSFETs for simulation of the switching performance of the device is presented. The basic idea of the model is to use a piece-wise nonlinear curve fitting technique to represent the non-linear capacitance Cdg of the device so as to reduce the orders of polynominal to quadratic while greatly improving the accuracy of the curve fitting. The purpose of the work is that the model should be sufficiently accurate, such that gate circuit conditions can be designed for optimal switching performance in a given circuit containing stray inductances. To realize the piece-wise non-linear method, small ideal switches are employed. The model is simple and can be implemented in most versions of SPICE.

   AN ACCURATE CIRCUITAL MODEL OF HIGH VOLTAGE LDMOSs FOR SWITCHING APPLICATIONS
By M. Fracchia; N. Esposito; M. Marchesoni; M. Mazzucchelli; L. Puglisi [View]
[Download]

Abstract: This paper presents a circuital model of high voltage lateral DMOS for switching applications. The model, implemented in the SPICE simulation program, is completely defined through terminal measurements and the adopted methodology can be easily applied to other types of power MOS devices. The use of SPICE involves some drawbacks to be overcome but the final model results in a powerful tool for the analysis and the design of both power devices and power electronic circuits. After a description of the proposed LDMOS modelling methodology, the experimental measurements required for the circuital model definition and the techniques used for the parameters optimization are presented. Comparlsons between simulations and experimental results are also reported end discussed.

   POWER MOSFET's LIBRARY BUILDER FOR SWITCHING CIRCUITS SIMULATION AND DESIGN
By M. Napieralska; H. Tranduc; C. E. Cordonnier; J. P. Berry; P. Rossel [View]
[Download]

Abstract: In this paper, two macromodels of the power V.DMOS transistors, compatibles with the circuit simulator SPICE, are described. Well suited for switching characteristics simulation, these macromodels are established for low voltage as well as high voltage devices (50V - 1000V) with the available current handling capability 2A-50A. A library of the SPICE model for commercial products covering these ranges is available now. It was used as a data base to define relationships between the model parameters. As a result, an "unified" V.DMOS model is proposed, it requires for a given technology only two parameters : i) drainsource breakdown voltage, ii) silicon chip area. A model builder program linked with SPICE, gives an 'exact" model for characterized transistors as well as an 'unified' model for new or unknown devices. This modeling takes into account the crystal chip temperature and includes several validation tests such as switching circuits.

   A NEW APPROACH TO PARAMETER EXTRACTION FOR SPICE POWER MOSFET MODEL
By M. Melito; F. Portuese [View]
[Download]

Abstract: The increasing complexity of Power MOSFET technology and the inclusion, on the same chip, of more and more intelligence together with the power switch, requires an accurate simulation of DC and AC characteristics of the power device to obtain a good correlation between simulation results and experimental data. A robust design has to take the worst cases into consideration as well as the typical condition. Also the simulation has to make provision for the spread of device characteristics due to manufacturing tolerances. This paper describes a new approach to parameter extraction for a sub-circuit model of Power MOSFETs to be used in the SPICE circuit simulator which uses a powerful analytical simulator developed by SGS-THOMSON Microelectronics. This simulator, whose models have been built considering physical structure and layout parameters, allows the optimization of the most important device characteristics and also takes into account the possible parameter spread due to the process. For this reason the program output can give not only the average values of required parameters but also their statistical distribution.

12 - Madep - M3.2 - DEVICES MODELING 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 12 - Madep - M3.2 - DEVICES MODELING 01
	[return to parent folder]

	A new generation of circuit simulators makes power MOSFET models simple By P. Türkes; H. J. Mattausch	[View] [Download]
Abstract: The accuracy in the simulation of a power MOSFET switching behaviour is mainly determined by a correct modelling of the voltage dependent gate drain capacitance and of the voltage dependent drain resistance modulation. A new approach of modelling SIPMOS power transistors, paying attention to these issues and keeping the overall model structure as well as the parameter extraction routine simple, is given. The voltage dependencies within this SIPMOS model are mathematically formulated and implemented into the simulator SABER. The modelling results are compared to actual measurements, for the verification of the validity of the model approximations.

	ANALYSES OF HIGHLY DOPED SEMICONDUCTOR DEVICE REGIONS WITH VARIOUS MODELS By S. Sokolic; S. Amon; F. Smole	[View] [Download]
Abstract: Paper presents a one-dimensional analysis of bipolar NPN transistor for the case of thermal equilibrium applying different models for highly doped regions. A general method enabling an efficient comparison of the described models is presented. Some transistor properties of interest, such as built-in field and minority carrier concentration, were calculated. The results obtained for different models describing heavily doping phenomena to different level of accuracy are discussed. Complicated time consuming methods (direct inclusion of band tails) are compared with simpler approaches considering appropriate expressions for BGN, transferable to the effective intrinsic concentration and suitable for advanced device modeling.

	A SPICE MODEL FOR THE ACCURATE SIMULATION OF A POWER MOSFET DURING SWITCHING By J. Shen; P. R. Palmer	[View] [Download]
Abstract: A new model of power MOSFETs for simulation of the switching performance of the device is presented. The basic idea of the model is to use a piece-wise nonlinear curve fitting technique to represent the non-linear capacitance Cdg of the device so as to reduce the orders of polynominal to quadratic while greatly improving the accuracy of the curve fitting. The purpose of the work is that the model should be sufficiently accurate, such that gate circuit conditions can be designed for optimal switching performance in a given circuit containing stray inductances. To realize the piece-wise non-linear method, small ideal switches are employed. The model is simple and can be implemented in most versions of SPICE.

	AN ACCURATE CIRCUITAL MODEL OF HIGH VOLTAGE LDMOSs FOR SWITCHING APPLICATIONS By M. Fracchia; N. Esposito; M. Marchesoni; M. Mazzucchelli; L. Puglisi	[View] [Download]
Abstract: This paper presents a circuital model of high voltage lateral DMOS for switching applications. The model, implemented in the SPICE simulation program, is completely defined through terminal measurements and the adopted methodology can be easily applied to other types of power MOS devices. The use of SPICE involves some drawbacks to be overcome but the final model results in a powerful tool for the analysis and the design of both power devices and power electronic circuits. After a description of the proposed LDMOS modelling methodology, the experimental measurements required for the circuital model definition and the techniques used for the parameters optimization are presented. Comparlsons between simulations and experimental results are also reported end discussed.

	POWER MOSFET's LIBRARY BUILDER FOR SWITCHING CIRCUITS SIMULATION AND DESIGN By M. Napieralska; H. Tranduc; C. E. Cordonnier; J. P. Berry; P. Rossel	[View] [Download]
Abstract: In this paper, two macromodels of the power V.DMOS transistors, compatibles with the circuit simulator SPICE, are described. Well suited for switching characteristics simulation, these macromodels are established for low voltage as well as high voltage devices (50V - 1000V) with the available current handling capability 2A-50A. A library of the SPICE model for commercial products covering these ranges is available now. It was used as a data base to define relationships between the model parameters. As a result, an "unified" V.DMOS model is proposed, it requires for a given technology only two parameters : i) drainsource breakdown voltage, ii) silicon chip area. A model builder program linked with SPICE, gives an 'exact" model for characterized transistors as well as an 'unified' model for new or unknown devices. This modeling takes into account the crystal chip temperature and includes several validation tests such as switching circuits.

	A NEW APPROACH TO PARAMETER EXTRACTION FOR SPICE POWER MOSFET MODEL By M. Melito; F. Portuese	[View] [Download]
Abstract: The increasing complexity of Power MOSFET technology and the inclusion, on the same chip, of more and more intelligence together with the power switch, requires an accurate simulation of DC and AC characteristics of the power device to obtain a good correlation between simulation results and experimental data. A robust design has to take the worst cases into consideration as well as the typical condition. Also the simulation has to make provision for the spread of device characteristics due to manufacturing tolerances. This paper describes a new approach to parameter extraction for a sub-circuit model of Power MOSFETs to be used in the SPICE circuit simulator which uses a powerful analytical simulator developed by SGS-THOMSON Microelectronics. This simulator, whose models have been built considering physical structure and layout parameters, allows the optimization of the most important device characteristics and also takes into account the possible parameter spread due to the process. For this reason the program output can give not only the average values of required parameters but also their statistical distribution.