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AN ACCURATE CIRCUITAL MODEL OF HIGH VOLTAGE LDMOSs FOR SWITCHING APPLICATIONS
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| Author(s) |
M. Fracchia; N. Esposito; M. Marchesoni; M. Mazzucchelli; L. Puglisi |
| Abstract |
This paper presents a circuital model of high voltage lateral DMOS for switching applications. The model, implemented in the SPICE simulation program, is completely defined through terminal measurements and the adopted methodology can be easily applied to other types of power MOS devices. The use of SPICE involves some drawbacks to be overcome but the final model results in a powerful tool for the analysis and the design of both power devices and power electronic circuits. After a description of the proposed LDMOS modelling methodology, the experimental measurements required for the circuital model definition and the techniques used for the parameters optimization are presented. Comparlsons between simulations and experimental results are also reported end discussed. |
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| Filename: | Unnamed file |
| Filesize: | 3.422 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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