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ANALYSES OF HIGHLY DOPED SEMICONDUCTOR DEVICE REGIONS WITH VARIOUS MODELS
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| Author(s) |
S. Sokolic; S. Amon; F. Smole |
| Abstract |
Paper presents a one-dimensional analysis of bipolar NPN transistor for the case of thermal equilibrium applying different models for highly doped regions. A general method enabling an efficient comparison of the described models is presented. Some transistor properties of interest, such as built-in field and minority carrier concentration, were calculated. The results obtained for different models describing heavily doping phenomena to different level of accuracy are discussed. Complicated time consuming methods (direct inclusion of band tails) are compared with simpler approaches considering appropriate expressions for BGN, transferable to the effective intrinsic concentration and suitable for advanced device modeling. |
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| Filename: | Unnamed file |
| Filesize: | 2.517 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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