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A new generation of circuit simulators makes power MOSFET models simple
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| Author(s) |
P. Türkes; H. J. Mattausch |
| Abstract |
The accuracy in the simulation of a power MOSFET switching behaviour is mainly determined by a correct modelling of the voltage dependent gate drain capacitance and of the voltage dependent drain resistance modulation. A new approach of modelling SIPMOS power transistors, paying attention to these issues and keeping the overall model structure as well as the parameter extraction routine simple, is given. The voltage dependencies within this SIPMOS model are mathematically formulated and implemented into the simulator SABER. The modelling results are compared to actual measurements, for the verification of the validity of the model approximations. |
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| Filename: | Unnamed file |
| Filesize: | 2.176 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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