EPE Association: 10 - Madep - M2.3

10 - Madep - M2.3 - NEW DEVICES 02
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 10 - Madep - M2.3 - NEW DEVICES 02

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   HIGH FREQUENCY, HIGH EFFICIENCY POWER CONVERSION
By Jun-Ichi Nishizawa [View]
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Abstract: Characteristic features of Static Induction Thyristor (SIThy) are high speed switching, high gate gain and low forward drop. As the performance of SIThy would be well known, SIThy is suitable for not only the improvement of power electronics but also new method of power conversion. The results of the fabrication and the evaluation of SIThy reveal that this device will close to the ideal switch which achieve switch on/off in 0 second and has infinitive control gain and no conduction loss.

   SURFACE GATE STATIC INDUCTION THYRISTORS
By W. Chen; S.H. Raza; J.H. Montgomery; B.M. Armstrong; H.S. Gamble [View]
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Abstract: A new process is presented for the production of surface gate Static Induction Thyristors with high yields and high voltage blocking gains. The only high definition mask required is used on the plain polished silicon water surface so good definition is easily achieved. No critical photolith alignments are required as orientation dependent and reactive ion etching are used to provide minimum gate widths and gate-cathode isolation. The cathode windows and the metallisation to the gate and cathode are self-aligned thus eliminating photolithographic processes which could lead to gate-cathode electrical short circuits.

   TRADE-OFF BETWEEN BLOCKING VOLTAGE AND CURRENT RATINGS IN NORMALLY-OFF POWER BMFETs WITH DIFFUSED GATES
By Giovanni Vito Persiano; Antonio G. M. Strollo; Paolo Spirito [View]
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Abstract: The static characteristics of high-voltage normally-off BMFET devices with surface-gate structure are analyzed by using two-dimensional numerical simulation. The numerical analysis highlights that the geometrical and physical parameters of the gate region have a major influence on both the voltage blocking capability and the on-state performances of the device. A partial overlap of the gates diffusion is demonstrated to be a simple mean to increase the blocking voltage of BMFET, without significant compromise for the on-state features of the device. The simulations show also that the source-gate overlap does not significantly affects the current gain of the BMFET. The Hfs, on the other hand, is shown to be strongly related to the minority-carrier transport parameters in the gate region.

   Modeling the Avalanche lnjection Phenomena in Bipolar Mode Field Effect Transistors
By G. Vitale [View]
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Abstract: High-voltage, high-current operation of power bipolar devices is known to be limited by avalanche injection phenomena, namely by double injection induced by impact ionization. In this paper a model of Bipolar Mode JFET, that includes avalanche injection, is presented. Results show that avalanche injection causes a current-controlled instability in the output characteristics, with a peak voltage that is strongly affected by the input circuit. The model is able to explain some failure phenomena that have been observed recently in high-voltage devices.

   THE DEPLETED BASE TRANSISTOR: A DEVICE FOR SMART POWER APPLICATIONS
By A. Bodensohn; J. Korec; D. Silber [View]
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Abstract: The objective of this work was to develope a device usefull to realize power supply, drive and diagnostic functions in High Voltage and Intelligent Power Integrated Circuits. To achieve voltage source behavior a n+-emitter is located in a depleted low doped p region of a high voltage diode. When floating, the emitter potential is determined by the surrounding space charge region. Connecting the emitter to the undepleted p-region forces an emitter-collector-current by injected electrons. We propose to call this new device the " Depleted Base Transistor " ( DB-Transistor ). This device has been numerically simulated using the 2D - device modeling program BAMBI. First DB-Transistors have been made on DI-substrates prepared by silicon direct bonding in a modified LDMOS-technology. The measured characteristics confirm the expected electrical behavior of the device.

10 - Madep - M2.3 - NEW DEVICES 02
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 10 - Madep - M2.3 - NEW DEVICES 02
	[return to parent folder]

	HIGH FREQUENCY, HIGH EFFICIENCY POWER CONVERSION By Jun-Ichi Nishizawa	[View] [Download]
Abstract: Characteristic features of Static Induction Thyristor (SIThy) are high speed switching, high gate gain and low forward drop. As the performance of SIThy would be well known, SIThy is suitable for not only the improvement of power electronics but also new method of power conversion. The results of the fabrication and the evaluation of SIThy reveal that this device will close to the ideal switch which achieve switch on/off in 0 second and has infinitive control gain and no conduction loss.

	SURFACE GATE STATIC INDUCTION THYRISTORS By W. Chen; S.H. Raza; J.H. Montgomery; B.M. Armstrong; H.S. Gamble	[View] [Download]
Abstract: A new process is presented for the production of surface gate Static Induction Thyristors with high yields and high voltage blocking gains. The only high definition mask required is used on the plain polished silicon water surface so good definition is easily achieved. No critical photolith alignments are required as orientation dependent and reactive ion etching are used to provide minimum gate widths and gate-cathode isolation. The cathode windows and the metallisation to the gate and cathode are self-aligned thus eliminating photolithographic processes which could lead to gate-cathode electrical short circuits.

	TRADE-OFF BETWEEN BLOCKING VOLTAGE AND CURRENT RATINGS IN NORMALLY-OFF POWER BMFETs WITH DIFFUSED GATES By Giovanni Vito Persiano; Antonio G. M. Strollo; Paolo Spirito	[View] [Download]
Abstract: The static characteristics of high-voltage normally-off BMFET devices with surface-gate structure are analyzed by using two-dimensional numerical simulation. The numerical analysis highlights that the geometrical and physical parameters of the gate region have a major influence on both the voltage blocking capability and the on-state performances of the device. A partial overlap of the gates diffusion is demonstrated to be a simple mean to increase the blocking voltage of BMFET, without significant compromise for the on-state features of the device. The simulations show also that the source-gate overlap does not significantly affects the current gain of the BMFET. The Hfs, on the other hand, is shown to be strongly related to the minority-carrier transport parameters in the gate region.

	Modeling the Avalanche lnjection Phenomena in Bipolar Mode Field Effect Transistors By G. Vitale	[View] [Download]
Abstract: High-voltage, high-current operation of power bipolar devices is known to be limited by avalanche injection phenomena, namely by double injection induced by impact ionization. In this paper a model of Bipolar Mode JFET, that includes avalanche injection, is presented. Results show that avalanche injection causes a current-controlled instability in the output characteristics, with a peak voltage that is strongly affected by the input circuit. The model is able to explain some failure phenomena that have been observed recently in high-voltage devices.

	THE DEPLETED BASE TRANSISTOR: A DEVICE FOR SMART POWER APPLICATIONS By A. Bodensohn; J. Korec; D. Silber	[View] [Download]
Abstract: The objective of this work was to develope a device usefull to realize power supply, drive and diagnostic functions in High Voltage and Intelligent Power Integrated Circuits. To achieve voltage source behavior a n+-emitter is located in a depleted low doped p region of a high voltage diode. When floating, the emitter potential is determined by the surrounding space charge region. Connecting the emitter to the undepleted p-region forces an emitter-collector-current by injected electrons. We propose to call this new device the " Depleted Base Transistor " ( DB-Transistor ). This device has been numerically simulated using the 2D - device modeling program BAMBI. First DB-Transistors have been made on DI-substrates prepared by silicon direct bonding in a modified LDMOS-technology. The measured characteristics confirm the expected electrical behavior of the device.