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SURFACE GATE STATIC INDUCTION THYRISTORS
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| Author(s) |
W. Chen; S.H. Raza; J.H. Montgomery; B.M. Armstrong; H.S. Gamble |
| Abstract |
A new process is presented for the production of surface gate Static Induction Thyristors with high yields and high voltage blocking gains. The only high definition mask required is used on the plain polished silicon water surface so good definition is easily achieved. No critical photolith alignments are required as orientation dependent and reactive ion etching are used to provide minimum gate widths and gate-cathode isolation. The cathode windows and the metallisation to the gate and cathode are self-aligned thus eliminating photolithographic processes which could lead to gate-cathode electrical short circuits. |
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| Filename: | Unnamed file |
| Filesize: | 3.9 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-16 by System |
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