| Abstract |
High-voltage, high-current operation of power bipolar devices is known to be limited by avalanche injection phenomena, namely by double injection induced by impact ionization. In this paper a model of Bipolar Mode JFET, that includes avalanche injection, is presented. Results show that avalanche injection causes a current-controlled instability in the output characteristics, with a peak voltage that is strongly affected by the input circuit. The model is able to explain some failure phenomena that have been observed recently in high-voltage devices. |
