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THE DEPLETED BASE TRANSISTOR: A DEVICE FOR SMART POWER APPLICATIONS
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| Author(s) |
A. Bodensohn; J. Korec; D. Silber |
| Abstract |
The objective of this work was to develope a device usefull to realize power supply, drive and diagnostic functions in High Voltage and Intelligent Power Integrated Circuits. To achieve voltage source behavior a n+-emitter is located in a depleted low doped p region of a high voltage diode. When floating, the emitter potential is determined by the surrounding space charge region. Connecting the emitter to the undepleted p-region forces an emitter-collector-current by injected electrons. We propose to call this new device the " Depleted Base Transistor " ( DB-Transistor ). This device has been numerically simulated using the 2D - device modeling program BAMBI. First DB-Transistors have been made on DI-substrates prepared by silicon direct bonding in a modified LDMOS-technology. The measured characteristics confirm the expected electrical behavior of the device. |
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| Filename: | Unnamed file |
| Filesize: | 1.283 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-16 by System |
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