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TRADE-OFF BETWEEN BLOCKING VOLTAGE AND CURRENT RATINGS IN NORMALLY-OFF POWER BMFETs WITH DIFFUSED GATES
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| Author(s) |
Giovanni Vito Persiano; Antonio G. M. Strollo; Paolo Spirito |
| Abstract |
The static characteristics of high-voltage normally-off BMFET devices with surface-gate structure are analyzed by using two-dimensional numerical simulation. The numerical analysis highlights that the geometrical and physical parameters of the gate region have a major influence on both the voltage blocking capability and the on-state performances of the device. A partial overlap of the gates diffusion is demonstrated to be a simple mean to increase the blocking voltage of BMFET, without significant compromise for the on-state features of the device. The simulations show also that the source-gate overlap does not significantly affects the current gain of the BMFET. The Hfs, on the other hand, is shown to be strongly related to the minority-carrier transport parameters in the gate region. |
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| Filename: | Unnamed file |
| Filesize: | 2.88 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-16 by System |
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