EPE Association: EPE 1993 - 26 - Dialogue Session DS1.2: DEVICES: MODELLING

EPE 1993 - 26 - Dialogue Session DS1.2: DEVICES: MODELLING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 26 - Dialogue Session DS1.2: DEVICES: MODELLING

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   POWER CONVERTER SIMULATION - Power and control domain
By A. Beuret; Fk. Bordry; H. Seran [View]
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Abstract: This paper demonstrates the application of the SABER analogue and digital simulator and the MAST modelling language in the domain of power system simulation. A behavioural switch model of the thyristor is presented. A great attention was paid to the modelling and the simulation of the firing circuits and control loops. Using the simulation of a large (9.7 MW) and complex power converter, it will be demonstrated how the SABER simulator and its modelling capabilities effectively answer the needs of power converters modelling and simulation - power and control domain -. Comparisons with results obtained on the actual power converters are given. The simulation of the overall system allows a better design giving rise to a finer study of the transitory performance and better understanding of the rejection of perturbations often difficult to quantify on the actual equipment. The possibility to simulate a complete power system (digital and analogue parts) with simulation time in the order of minutes is a break-through in the power system simulation domain.

   DETERMINATION OF CATALOGUE PARAMETERS OF POWER SEMICONDUCTOR DEVICES USING EXPERIMENT DESIGN THEORY
By Jan Pilacinski; Roman Muszynski; Colin Smith [View]
[Download]

Abstract: The traditional determination of parameters and characteristics of semiconductor power devices requires a large number of measurements. The graphic presentation and tabular listing of the measured parameters employed in catalogues are inconvenient and badly suited for direct use, especially in computer sirnulation and CAD converter designing. The paper presents a way of solving these problems on the example of measurements of dynamic parameters of a thyristor. The effective approach proposed makes use of the mathematical apparatus of experiment design theory. It allows a minimisation of the number of measurements taken and a holistic, analytical formulation of the influence of factors on parameters, and produces formulae describing the parameters of the thyristor. Successive stages of the method are illustrated by the determination and description of reverse-recovered charge and the turn-off time of the thyristor as a function of four factors: junction temperature, forward current, the rate of fall of forward current at turn-off, and reverse voltage.

   MODELIZATION AND SIMULATION OF SEMICONDUCTOR PROTECTION CROWBAR DEVICES
By J. Y. Dépée; R. Ehlinger; J. P. Chante [View]
[Download]

Abstract: This paper concerns a model for semiconductor protection crowbar devices usable by circuit simulation softwares. This model takes into account some specific dynamical behaviour characteristics. lts parametrization and validation use experimental observations conceming fast voltage applications and dumped oscillating discharges.

   TWO-DIMENSIONAL ANALYSIS OF SIT (STATIC INDUCTION TRANSISTOR) DURING SWITCHING PROCESS
By M. Grecki; A. Napieralski [View]
[Download]

Abstract: In this paper the 2-D analysis of Static lnduction Transistor (SIT) is presented. In order to understand the behaviour of the SIT the two-dimensional physical model of its semiconductor structure has been developed. The investigations focused on transient states with external load circuit. Also the bipolar mode was investigated in order to show the influence of positive gate bias on the voltage drop in the ON-state and on the turn-off time. Statie and dynamic power Iosses are analysed in order to compare the SIT switching performances with those of other commonly used power devices (VDMOS, Bipolar Transistors, IGBT).

   ANALYSIS OF SECOND BREAKDOWN LIMITS IN RBSOA OF BIPOLAR TRANSISTORS
By L. Fratelli; G. Busatto; P. Spirito; G. F. Vitale [View]
[Download]

Abstract: Performances of different power bipolar transistors during inductive turn-off transient are experimentally compared, by means of a non-destructive tester, and analysed with the aid of a two-dimensional numerical simulator. Sustaining voltage dependences upon collector current and base drive are found, which can explain its transient evolution. Finally, influence on devices' behaviour of base drive and cell geometry is shown, and interpreted in terms of power density distribution.

   SAVING SYSTEM DESIGN TIME WITH VERY FAST AND HIGH PRECISION SMART POWER MACROMODEL
By R. Moreno [View]
[Download]

Abstract: The users of smart power ICs may spend considerable time to simulate the complete electronic system. Even with the progress and the advent of low cost and powerful workstation computers, the "in system" simulation of a full smart power device becomes a very hard job. This paper presents a complete spice macromodel of a high side switch. The macromodel is compatible with a standard SPICE simulator. This approach can accelerate the simulation speed by 400-600 times.

   PROBLEMS RELATED TO POWER SEMICONDUCTOR DEVICE MODELING
By V. A. Kuzmin; T. T. Mnatsakanov; I. L.Rostovtsev; S. N. Yurkov [View]
[Download]

Abstract: Results obtained by a group of specialists in All-Russian Electrotechnical Institute duting last 10 years are presented. Numerical programs intended for power semiconductor device design and research are described. These programs are based on original models of device characteristics specially adjusted for power semiconductor device simulation. The peculiar features that distinguish our programs from other programs elaborated for semiconductor device simulation can be described as follows. Our programs are based on original formulation of charge carrier transport equations. These new transport equations prove to be quite necessary for correct treatment of nonlinear physical phenomena which arise in device under high injection conditions. Our programs take into account the constructive peculiarities of devices i.e. type of device construction (pressed, alloyed, etc.), thickness and thermophysical parameters of layers (silicon, tungsten, molibdenium, etc.), the contact thermal resistance (for devices with pressed construction), the existence of auxiliary structure in thyristors and complicated topology of gate electrode. All models utilized in our programs have been carefully examined and perfectly well describe the available experimental data.

   ACCURACY AND VALIDATION ISSUES FOR THE SIMULATION OF POWER SEMICONDUCTOR DEVICES
By C. Mark Johnson; David A. Hinchley; Patrick R. Palmer [View]
[Download]

Abstract: CAE techniques, although widely used in the design and manufacture of VLSI devices, have so far failed to make much impact on power device technology. Important features such as switching performance and non uniform behaviour are typically difficult to study using standard device simulation packages. Common assumptions used in the discretisation of the semiconductor device equations are shown to have serious shortcomings when applied to typical power structures. Techniques for error estimation and validation are discussed. Comparison of the results of GTO thyristor turn-off simulations performed on fixed and adaptive meshes demonstrate the importance of choosing the correct discretised mesh. It is concluded that the accurate modelling of power devices requires a consistent formulation of the semiconductor device equations, adaptive meshing and a reliable means for validation of the results.

   FUNCTIONAL COMPONENT INTEGRATION IN A MULTI-KILOWATT RESONANT CONVERTER
By I. W. Hofsajer; J. D. van Wyk; J. A. Ferreira [View]
[Download]

Abstract: The electromagnetic integration of a multi-kilowatt resonant DC-DC convertor is described. Both the passive and the active components are integrated into a compact planar structure. The technology required to design and manufacture the structure is presented. A basic electromagnetic analysis of the structure is performed. The converter is constructed and the theoretical results are experimentally verified.

EPE 1993 - 26 - Dialogue Session DS1.2: DEVICES: MODELLING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 26 - Dialogue Session DS1.2: DEVICES: MODELLING
	[return to parent folder]

	POWER CONVERTER SIMULATION - Power and control domain By A. Beuret; Fk. Bordry; H. Seran	[View] [Download]
Abstract: This paper demonstrates the application of the SABER analogue and digital simulator and the MAST modelling language in the domain of power system simulation. A behavioural switch model of the thyristor is presented. A great attention was paid to the modelling and the simulation of the firing circuits and control loops. Using the simulation of a large (9.7 MW) and complex power converter, it will be demonstrated how the SABER simulator and its modelling capabilities effectively answer the needs of power converters modelling and simulation - power and control domain -. Comparisons with results obtained on the actual power converters are given. The simulation of the overall system allows a better design giving rise to a finer study of the transitory performance and better understanding of the rejection of perturbations often difficult to quantify on the actual equipment. The possibility to simulate a complete power system (digital and analogue parts) with simulation time in the order of minutes is a break-through in the power system simulation domain.

	DETERMINATION OF CATALOGUE PARAMETERS OF POWER SEMICONDUCTOR DEVICES USING EXPERIMENT DESIGN THEORY By Jan Pilacinski; Roman Muszynski; Colin Smith	[View] [Download]
Abstract: The traditional determination of parameters and characteristics of semiconductor power devices requires a large number of measurements. The graphic presentation and tabular listing of the measured parameters employed in catalogues are inconvenient and badly suited for direct use, especially in computer sirnulation and CAD converter designing. The paper presents a way of solving these problems on the example of measurements of dynamic parameters of a thyristor. The effective approach proposed makes use of the mathematical apparatus of experiment design theory. It allows a minimisation of the number of measurements taken and a holistic, analytical formulation of the influence of factors on parameters, and produces formulae describing the parameters of the thyristor. Successive stages of the method are illustrated by the determination and description of reverse-recovered charge and the turn-off time of the thyristor as a function of four factors: junction temperature, forward current, the rate of fall of forward current at turn-off, and reverse voltage.

	MODELIZATION AND SIMULATION OF SEMICONDUCTOR PROTECTION CROWBAR DEVICES By J. Y. Dépée; R. Ehlinger; J. P. Chante	[View] [Download]
Abstract: This paper concerns a model for semiconductor protection crowbar devices usable by circuit simulation softwares. This model takes into account some specific dynamical behaviour characteristics. lts parametrization and validation use experimental observations conceming fast voltage applications and dumped oscillating discharges.

	TWO-DIMENSIONAL ANALYSIS OF SIT (STATIC INDUCTION TRANSISTOR) DURING SWITCHING PROCESS By M. Grecki; A. Napieralski	[View] [Download]
Abstract: In this paper the 2-D analysis of Static lnduction Transistor (SIT) is presented. In order to understand the behaviour of the SIT the two-dimensional physical model of its semiconductor structure has been developed. The investigations focused on transient states with external load circuit. Also the bipolar mode was investigated in order to show the influence of positive gate bias on the voltage drop in the ON-state and on the turn-off time. Statie and dynamic power Iosses are analysed in order to compare the SIT switching performances with those of other commonly used power devices (VDMOS, Bipolar Transistors, IGBT).

	ANALYSIS OF SECOND BREAKDOWN LIMITS IN RBSOA OF BIPOLAR TRANSISTORS By L. Fratelli; G. Busatto; P. Spirito; G. F. Vitale	[View] [Download]
Abstract: Performances of different power bipolar transistors during inductive turn-off transient are experimentally compared, by means of a non-destructive tester, and analysed with the aid of a two-dimensional numerical simulator. Sustaining voltage dependences upon collector current and base drive are found, which can explain its transient evolution. Finally, influence on devices' behaviour of base drive and cell geometry is shown, and interpreted in terms of power density distribution.

	SAVING SYSTEM DESIGN TIME WITH VERY FAST AND HIGH PRECISION SMART POWER MACROMODEL By R. Moreno	[View] [Download]
Abstract: The users of smart power ICs may spend considerable time to simulate the complete electronic system. Even with the progress and the advent of low cost and powerful workstation computers, the "in system" simulation of a full smart power device becomes a very hard job. This paper presents a complete spice macromodel of a high side switch. The macromodel is compatible with a standard SPICE simulator. This approach can accelerate the simulation speed by 400-600 times.

	PROBLEMS RELATED TO POWER SEMICONDUCTOR DEVICE MODELING By V. A. Kuzmin; T. T. Mnatsakanov; I. L.Rostovtsev; S. N. Yurkov	[View] [Download]
Abstract: Results obtained by a group of specialists in All-Russian Electrotechnical Institute duting last 10 years are presented. Numerical programs intended for power semiconductor device design and research are described. These programs are based on original models of device characteristics specially adjusted for power semiconductor device simulation. The peculiar features that distinguish our programs from other programs elaborated for semiconductor device simulation can be described as follows. Our programs are based on original formulation of charge carrier transport equations. These new transport equations prove to be quite necessary for correct treatment of nonlinear physical phenomena which arise in device under high injection conditions. Our programs take into account the constructive peculiarities of devices i.e. type of device construction (pressed, alloyed, etc.), thickness and thermophysical parameters of layers (silicon, tungsten, molibdenium, etc.), the contact thermal resistance (for devices with pressed construction), the existence of auxiliary structure in thyristors and complicated topology of gate electrode. All models utilized in our programs have been carefully examined and perfectly well describe the available experimental data.

	ACCURACY AND VALIDATION ISSUES FOR THE SIMULATION OF POWER SEMICONDUCTOR DEVICES By C. Mark Johnson; David A. Hinchley; Patrick R. Palmer	[View] [Download]
Abstract: CAE techniques, although widely used in the design and manufacture of VLSI devices, have so far failed to make much impact on power device technology. Important features such as switching performance and non uniform behaviour are typically difficult to study using standard device simulation packages. Common assumptions used in the discretisation of the semiconductor device equations are shown to have serious shortcomings when applied to typical power structures. Techniques for error estimation and validation are discussed. Comparison of the results of GTO thyristor turn-off simulations performed on fixed and adaptive meshes demonstrate the importance of choosing the correct discretised mesh. It is concluded that the accurate modelling of power devices requires a consistent formulation of the semiconductor device equations, adaptive meshing and a reliable means for validation of the results.

	FUNCTIONAL COMPONENT INTEGRATION IN A MULTI-KILOWATT RESONANT CONVERTER By I. W. Hofsajer; J. D. van Wyk; J. A. Ferreira	[View] [Download]
Abstract: The electromagnetic integration of a multi-kilowatt resonant DC-DC convertor is described. Both the passive and the active components are integrated into a compact planar structure. The technology required to design and manufacture the structure is presented. A basic electromagnetic analysis of the structure is performed. The converter is constructed and the theoretical results are experimentally verified.