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TWO-DIMENSIONAL ANALYSIS OF SIT (STATIC INDUCTION TRANSISTOR) DURING SWITCHING PROCESS
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| Author(s) |
M. Grecki; A. Napieralski |
| Abstract |
In this paper the 2-D analysis of Static lnduction Transistor (SIT) is presented. In order to understand the behaviour of the SIT the two-dimensional physical model of its semiconductor structure has been developed. The investigations focused on transient states with external load circuit. Also the bipolar mode was investigated in order to show the influence of positive gate bias on the voltage drop in the ON-state and on the turn-off time. Statie and dynamic power Iosses are analysed in order to compare the SIT switching performances with those of other commonly used power devices (VDMOS, Bipolar Transistors, IGBT). |
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| Filename: | Unnamed file |
| Filesize: | 2.962 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-15 by System |
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