| Abstract |
Results obtained by a group of specialists in All-Russian Electrotechnical Institute duting last 10 years are presented. Numerical programs intended for power semiconductor device design and research are described. These programs are based on original models of device characteristics specially adjusted for power semiconductor device simulation. The peculiar features that distinguish our programs from other programs elaborated for semiconductor device simulation can be described as follows. Our programs are based on original formulation of charge carrier transport equations. These new transport equations prove to be quite necessary for correct treatment of nonlinear physical phenomena which arise in device under high injection conditions. Our programs take into account the constructive peculiarities of devices i.e. type of device construction (pressed, alloyed, etc.), thickness and thermophysical parameters of layers (silicon, tungsten, molibdenium, etc.), the contact thermal resistance (for devices with pressed construction), the existence of auxiliary structure in thyristors and complicated topology of gate electrode. All models utilized in our programs have been carefully examined and perfectly well describe the available experimental data. |
