| Filename: | Unnamed file |
| Filesize: | 3.183 MB |
| ANALYSIS OF SECOND BREAKDOWN LIMITS IN RBSOA OF BIPOLAR TRANSISTORS | ||||||
| Author(s) | L. Fratelli; G. Busatto; P. Spirito; G. F. Vitale | |||||
| Abstract | Performances of different power bipolar transistors during inductive turn-off transient are experimentally compared, by means of a non-destructive tester, and analysed with the aid of a two-dimensional numerical simulator. Sustaining voltage dependences upon collector current and base drive are found, which can explain its transient evolution. Finally, influence on devices' behaviour of base drive and cell geometry is shown, and interpreted in terms of power density distribution. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-05-15 by System | |||||
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