EPE Association: EPE 2015 - DS3b: Power System Integration, Packaging & Thermal Management

EPE 2015 - DS3b: Power System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - DS3b: Power System Integration, Packaging & Thermal Management

   [return to parent folder]

   A New Standard IGBT Housing for High-Power Converters
By Andreas NAGEL [View]
[Download]

Abstract: In the field of high-power converters, the standard IGBT module housing is the IHM / IHV established by EUPEC during the 1990s. This paper explains the limitations of this housing and presents approaches for a new, next-generation housing. This new housing design targets a reduction of the leakage inductance and a significant power density improvement. With regard to the highest power densities for high-power traction converters, initial results are shown for converters using a reverse conducting diode controlled (RCDC) IGBT.

   A Scale-Photo-Electro-Thermal Model of Organic Light-Emitting Diodes (OLEDs) for Design Lighting Systems
By Vitor Cristiano BENDER [View]
[Download]

Abstract: A model for Organic Light-Emitting Diodes (OLEDs) based on datasheet information and experimental tests to approach the interaction among scale-photo-electro-thermal (SPET) domains is presented in this paper. The model has been verified for two different OLEDs, with favourable agreement among theo-retical and experimental results. The results show the influence of scale factor on heat transfer mecha-nism and the temperature effect on electrical and photometrical performance. This model is useful for predicting OLED behaviour and for simulating OLED drivers during the design of the lighting system.

   Analysis of Gate-Driver Circuit requirements for H-Bridge Based Converters with GaN HFETs
By Farshid SARRAFIN-ARDEBILI [View]
[Download]

Abstract: The enhanced Gallium-Nitride (GaN) power transistors have recently emerged as one of the promising next generations for power switches for high frequency and high power density switch mode power converters. This paper analyses and describes the requirements of a high frequency Quad Gate Driver (4 drivers) which will be embedded in an isolated low voltage H-Bridge based converter (up to 100V). This work is on the one hand based on simulation results of the Quad Gate Driver and on the other hand the experimental results for a 150W, 30V/5A DAB-GaN prototype operating at 1 MHz switching frequency with off-the-shelf gate drivers.

   Electro-thermal model of an integrated buck converter
By Baptiste TRAJIN [View]
[Download]

Abstract: This study deals with new integrated systems for power electronic applications including wide-bandgap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectivessuch as higher temperature operating points than conventional Silicon (Si) semiconductors. Thepresent work intends to study the electro-thermal behaviour of an integrated buck converter composedof a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of localheat sources due to Joule effect and compact thermal model of the assembly are proposed to predictlocal temperature of power electronic components.

   Experimental Evaluation of IGBT Junction Temperature Measurement via Peak Gate Current
By Nick BAKER [View]
[Download]

Abstract: Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this method. Temperature measurements are made on IGBTs operating under steady state power dissipation. The peak gate current is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current.

   Failure to Short-Circuit Capability of Emerging Direct-Lead-Bonding Power Module. Comparison with Standard Interconnection. Application for Dedicated Fail-Safe
By William SANFINS [View]
[Download]

Abstract: The Direct-Lead-Bonding (DLB) interconnection appears to be a promising technology for power-module (PM). Nevertheless, the absence of wire-fuse-effect in case of extreme failure, compared to classical wire-bonding, leads authors to rethink fail-safe and fault-tolerant strategies for critical converter. Therefore, this paper will provide a comparative study between these two designs in terms of failure-mode and post-fault high-current capability.

   High Performance Two H-bridge in Cascaded Gradient Driver Design with SiC Power MOSFET
By Ruxi WANG [View]
[Download]

Abstract: In this paper, a detailed high efficiency two H-bridge in cascaded gradient driver design with 1700V SiC MOSFET is presented. Both module and system level stray inductance are minimized to better utilize the SiC high switching speed capability. The amplifier loss is calculated in simulation with device loss model and also verified in hardware experiment. The efficiency of the amplifier is higher than 99\%. Higher output ripple frequency (up to 125 kHz) provides the opportunity to design a high density output filter without magnetic components. A novel ripple current cancellation circuit (RCCC) with embedded coolant pipe is also presented and demonstrated.

   Highly integrated power modules basing on copper thick-film-on-DCB for high frequency operation of SiC semiconductors - Design and manufacture of low-inductive
By Max SCHMENGER [View]
[Download]

Abstract: This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented on the substrate in order to minimize parasitic inductances. Thus, the module is especially suited for high-frequency operation. In order to maintain high mechanical strength of the module's substrate, a Direct Copper Bond (DCB) provides the base for multiple thick-film layers. The used thick-film dielectric insulates the gate-drive islands and also works as solder-stop material. The heat-spreading capabilities of ceramic substrates and DCB substrates are investigated by simulation.

   Modular thermal design approach for semiconductor modules in power electronic converters
By Artjom GRUBER [View]
[Download]

Abstract: This paper presents a new modular approach for the thermal design of semiconductor power modules that serves to determine the number and size of the power semiconductor chips, the used packaging technology and the heat sink design at an early stage of the design process. As in various applications like for example photovoltaic inverters the thermal design is mainly dependent upon the worst case stationary operation conditions, the model refers to the static thermal behavior of the system only. It consists of three parts: first, a 2D simulation based calculation of the thermal resistance between the semiconductor chips and the heat sink, second, an analytic model for designing forced air cooled heat sinks and last, a routine for suitable combination of modules and heat sinks.

   Multi-physic optimization of a Smart Actuator for an Automotive Application
By Florent ROBERT [View]
[Download]

Abstract: This paper describes a design framework for optimization of automotive mechatronic systems that usesanalog simulations and evolutionary algorithms. We demonstrate the effectiveness of our methodologyin sizing a complex actuator under multi-physic constraints. Our challenge was to design a compactexhaust gas recirculation (EGR) valve meeting the severe electrical, thermal, mechanical and magneticrequirements of the system.

   Strength Pareto Evolutionary Algorithm For Sizing a Set of SiC Converter Connected to AC Machines Winding by Short Planar Cable
By Ignace RASOANARIVO [View]
[Download]

Abstract: This paper deals with a set of ultra fast converter connected to the winding of AC machine by a short planar cable. The main feature of this study is to design a set of bus bar, a planar cable to mitigate surges produced at each switching commutation of the SiC Transistor, without consequently modifying its rise time. This calculation is obtained by the principle of genetic algorithm based on Strength Pareto Evolutionary Algorithm (SPEA), with as extra constraint a limited volume of the overall size of the system. Simulations analysis and experimental tests are carried out and compared, they underline the main benefits of the developed method

   Study of Temperature Increase in Large Power-Converter Cabinet Using Iron Materials with Magnetic Characteristics
By NAOKI SAKURAI [View]
[Download]

Abstract: The increase in surface temperature of the large cabinets of power converters, which are typically made of iron materials (with magnetic characteristics), was investigated. For this investigation, a method combining electromagnetic-field analysis and thermal-fluid analysis by using in-house analysis tools was established. According to the investigation results, the calculated temperature rise due to the eddy current was consistent (within an error of 9.2\%) with the measured temperature rise.

   Water Storage for HVDC Thyristor Valves Cooling System
By YULIANG WEN [View]
[Download]

Abstract: In order to ensure the HVDC convertor valve works properly, the heat produced from the valve must be dissipated into the atmosphere to keep the device within the normal temperature range. However, efficiency of the valve cooling system is affected by environment temperature. In water deficient areas, the traditional circulating water cooling tower is not normally adopted. And the heat dissipation capacity of the conventional water-air exchanger system is insufficient in summer as the ambient temperature is higher than 40oC. Therefore, a cold storage system combined with air cooling system was presented. This study and test show that the proposed cold storage system can maintain the temperature entering into the HVDC thyristor valve within the designed range.

EPE 2015 - DS3b: Power System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - DS3b: Power System Integration, Packaging & Thermal Management
	[return to parent folder]

	A New Standard IGBT Housing for High-Power Converters By Andreas NAGEL	[View] [Download]
Abstract: In the field of high-power converters, the standard IGBT module housing is the IHM / IHV established by EUPEC during the 1990s. This paper explains the limitations of this housing and presents approaches for a new, next-generation housing. This new housing design targets a reduction of the leakage inductance and a significant power density improvement. With regard to the highest power densities for high-power traction converters, initial results are shown for converters using a reverse conducting diode controlled (RCDC) IGBT.

	A Scale-Photo-Electro-Thermal Model of Organic Light-Emitting Diodes (OLEDs) for Design Lighting Systems By Vitor Cristiano BENDER	[View] [Download]
Abstract: A model for Organic Light-Emitting Diodes (OLEDs) based on datasheet information and experimental tests to approach the interaction among scale-photo-electro-thermal (SPET) domains is presented in this paper. The model has been verified for two different OLEDs, with favourable agreement among theo-retical and experimental results. The results show the influence of scale factor on heat transfer mecha-nism and the temperature effect on electrical and photometrical performance. This model is useful for predicting OLED behaviour and for simulating OLED drivers during the design of the lighting system.

	Analysis of Gate-Driver Circuit requirements for H-Bridge Based Converters with GaN HFETs By Farshid SARRAFIN-ARDEBILI	[View] [Download]
Abstract: The enhanced Gallium-Nitride (GaN) power transistors have recently emerged as one of the promising next generations for power switches for high frequency and high power density switch mode power converters. This paper analyses and describes the requirements of a high frequency Quad Gate Driver (4 drivers) which will be embedded in an isolated low voltage H-Bridge based converter (up to 100V). This work is on the one hand based on simulation results of the Quad Gate Driver and on the other hand the experimental results for a 150W, 30V/5A DAB-GaN prototype operating at 1 MHz switching frequency with off-the-shelf gate drivers.

	Electro-thermal model of an integrated buck converter By Baptiste TRAJIN	[View] [Download]
Abstract: This study deals with new integrated systems for power electronic applications including wide-bandgap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectivessuch as higher temperature operating points than conventional Silicon (Si) semiconductors. Thepresent work intends to study the electro-thermal behaviour of an integrated buck converter composedof a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of localheat sources due to Joule effect and compact thermal model of the assembly are proposed to predictlocal temperature of power electronic components.

	Experimental Evaluation of IGBT Junction Temperature Measurement via Peak Gate Current By Nick BAKER	[View] [Download]
Abstract: Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this method. Temperature measurements are made on IGBTs operating under steady state power dissipation. The peak gate current is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current.

	Failure to Short-Circuit Capability of Emerging Direct-Lead-Bonding Power Module. Comparison with Standard Interconnection. Application for Dedicated Fail-Safe By William SANFINS	[View] [Download]
Abstract: The Direct-Lead-Bonding (DLB) interconnection appears to be a promising technology for power-module (PM). Nevertheless, the absence of wire-fuse-effect in case of extreme failure, compared to classical wire-bonding, leads authors to rethink fail-safe and fault-tolerant strategies for critical converter. Therefore, this paper will provide a comparative study between these two designs in terms of failure-mode and post-fault high-current capability.

	High Performance Two H-bridge in Cascaded Gradient Driver Design with SiC Power MOSFET By Ruxi WANG	[View] [Download]
Abstract: In this paper, a detailed high efficiency two H-bridge in cascaded gradient driver design with 1700V SiC MOSFET is presented. Both module and system level stray inductance are minimized to better utilize the SiC high switching speed capability. The amplifier loss is calculated in simulation with device loss model and also verified in hardware experiment. The efficiency of the amplifier is higher than 99\%. Higher output ripple frequency (up to 125 kHz) provides the opportunity to design a high density output filter without magnetic components. A novel ripple current cancellation circuit (RCCC) with embedded coolant pipe is also presented and demonstrated.

	Highly integrated power modules basing on copper thick-film-on-DCB for high frequency operation of SiC semiconductors - Design and manufacture of low-inductive By Max SCHMENGER	[View] [Download]
Abstract: This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented on the substrate in order to minimize parasitic inductances. Thus, the module is especially suited for high-frequency operation. In order to maintain high mechanical strength of the module's substrate, a Direct Copper Bond (DCB) provides the base for multiple thick-film layers. The used thick-film dielectric insulates the gate-drive islands and also works as solder-stop material. The heat-spreading capabilities of ceramic substrates and DCB substrates are investigated by simulation.

	Modular thermal design approach for semiconductor modules in power electronic converters By Artjom GRUBER	[View] [Download]
Abstract: This paper presents a new modular approach for the thermal design of semiconductor power modules that serves to determine the number and size of the power semiconductor chips, the used packaging technology and the heat sink design at an early stage of the design process. As in various applications like for example photovoltaic inverters the thermal design is mainly dependent upon the worst case stationary operation conditions, the model refers to the static thermal behavior of the system only. It consists of three parts: first, a 2D simulation based calculation of the thermal resistance between the semiconductor chips and the heat sink, second, an analytic model for designing forced air cooled heat sinks and last, a routine for suitable combination of modules and heat sinks.

	Multi-physic optimization of a Smart Actuator for an Automotive Application By Florent ROBERT	[View] [Download]
Abstract: This paper describes a design framework for optimization of automotive mechatronic systems that usesanalog simulations and evolutionary algorithms. We demonstrate the effectiveness of our methodologyin sizing a complex actuator under multi-physic constraints. Our challenge was to design a compactexhaust gas recirculation (EGR) valve meeting the severe electrical, thermal, mechanical and magneticrequirements of the system.

	Strength Pareto Evolutionary Algorithm For Sizing a Set of SiC Converter Connected to AC Machines Winding by Short Planar Cable By Ignace RASOANARIVO	[View] [Download]
Abstract: This paper deals with a set of ultra fast converter connected to the winding of AC machine by a short planar cable. The main feature of this study is to design a set of bus bar, a planar cable to mitigate surges produced at each switching commutation of the SiC Transistor, without consequently modifying its rise time. This calculation is obtained by the principle of genetic algorithm based on Strength Pareto Evolutionary Algorithm (SPEA), with as extra constraint a limited volume of the overall size of the system. Simulations analysis and experimental tests are carried out and compared, they underline the main benefits of the developed method

	Study of Temperature Increase in Large Power-Converter Cabinet Using Iron Materials with Magnetic Characteristics By NAOKI SAKURAI	[View] [Download]
Abstract: The increase in surface temperature of the large cabinets of power converters, which are typically made of iron materials (with magnetic characteristics), was investigated. For this investigation, a method combining electromagnetic-field analysis and thermal-fluid analysis by using in-house analysis tools was established. According to the investigation results, the calculated temperature rise due to the eddy current was consistent (within an error of 9.2\%) with the measured temperature rise.

	Water Storage for HVDC Thyristor Valves Cooling System By YULIANG WEN	[View] [Download]
Abstract: In order to ensure the HVDC convertor valve works properly, the heat produced from the valve must be dissipated into the atmosphere to keep the device within the normal temperature range. However, efficiency of the valve cooling system is affected by environment temperature. In water deficient areas, the traditional circulating water cooling tower is not normally adopted. And the heat dissipation capacity of the conventional water-air exchanger system is insufficient in summer as the ambient temperature is higher than 40oC. Therefore, a cold storage system combined with air cooling system was presented. This study and test show that the proposed cold storage system can maintain the temperature entering into the HVDC thyristor valve within the designed range.