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Highly integrated power modules basing on copper thick-film-on-DCB for high frequency operation of SiC semiconductors - Design and manufacture of low-inductive
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| Author(s) |
Max SCHMENGER |
| Abstract |
This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented on the substrate in order to minimize parasitic inductances. Thus, the module is especially suited for high-frequency operation. In order to maintain high mechanical strength of the module's substrate, a Direct Copper Bond (DCB) provides the base for multiple thick-film layers. The used thick-film dielectric insulates the gate-drive islands and also works as solder-stop material. The heat-spreading capabilities of ceramic substrates and DCB substrates are investigated by simulation. |
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| Filename: | 0003-epe2015-full-12071332.pdf |
| Filesize: | 1.629 MB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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