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Electro-thermal model of an integrated buck converter
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| Author(s) |
Baptiste TRAJIN |
| Abstract |
This study deals with new integrated systems for power electronic applications including wide-bandgap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectivessuch as higher temperature operating points than conventional Silicon (Si) semiconductors. Thepresent work intends to study the electro-thermal behaviour of an integrated buck converter composedof a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of localheat sources due to Joule effect and compact thermal model of the assembly are proposed to predictlocal temperature of power electronic components. |
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| Filename: | 0149-epe2015-full-18013904.pdf |
| Filesize: | 251.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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