EPE Association: EPE 1997 – 75: Dialogue Session DS1e-1: CHARACTERIZATION AND APPLICATIONS

EPE 1997 – 75: Dialogue Session DS1e-1: CHARACTERIZATION AND APPLICATIONS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 75: Dialogue Session DS1e-1: CHARACTERIZATION AND APPLICATIONS

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   DYNAMICS BEHAVIOUR OF PUNCH-THROUGH IGBT IN HARD-SWITCHING CONVERTERS AT HIGH TEMPERATURE
By S. Azzopardi; C. Jamet; J.-M. Vinassa; C. Zardini [View]
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Abstract: Rising temperature causes many changes in power transistor behaviour. Both electrical and internal physical characteristics of the device behaviour are modified. This paper gives an analysis of the temperature influence on dynamics switching of PunchThrough IGBT behaviour in a hard-switching converter. The internal physical and electrical investigation is done by comparison between the experiment and the simulation results. Simulated results in good agreement with experimental results allow to understand the internal physical behaviour of the device. We show that the increasing temperature influences turn-off of the device whereas this effect is reduced during turn-on.

   IGBT MODULES WORKING AT CRYOGENIC TEMPERATURE
By F. Rosenbauer; H. W. Lorenzen [View]
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Abstract: For the use in superconducting magnetic energy storage (SMES) systems the static and dynamic behaviour of IGBT modules in the temperature range from 5 to 300 K was investigated. A complex experimental setup was used for testing IGBT modules rated for 300- 500 A in single and parallel operation. The electric measurements of the modules covered the static forward characteristic, the switching, the blocking voltage and the characteristic of the integrated inverse diode. The experiments showed that the devices have a very different temperature behaviour, which is caused by their varying design. Only modules of the non-punch-through type can work over the whole temperature range and even different non-punch-through designs result in very distinct behaviour. Based on these results a semiconductor switch working at 5 K was developed.

   EFFECT OF THE PHYSICAL STRUCTURE ON THE RECOVERY SOFTNESS OF PIN DIODES: EXPERIMENTAL AND NUMERICAL ANALYSIS
By M. Pasqualetti; M. Portesine; R. Scicolone; B. Zerbinati; R. Menozzi; A. Bellini; P. Cova [View]
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Abstract: In order to investigate the effect of physical and structural features on the softness of PIN power fast diode reverse recovery, a large matrix of test devices has been designed covering the relevant ranges of resistivity, intrinsic base width and lifetime. Experimental data have been successfully compared with simulated results obtained with a drift diffusion numerical simulator.

   SERIES AND PARALLEL OPERATING OF MOS CONTROLLED THYRISTOR
By A. Merazga; J.M. Li; D. Lafore [View]
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Abstract: The Mos Controlled Thyristor is a new power device seeking its place in the field of power electronic applications. By comparison with IGBTs, the component can offer many advantages, such as low on-state voltage and high current density. To achieve higher voltage and current switches with MCTs, it is necessary to arrange them in series and parallel operating modes. The aim of this paper is to present an experimental analysis of the behavior of the PMCT, mounted either in series or parallel, under inductive switching conditions.

   COMPARISON OF PT AND NPT CELL CONCEPT FOR 600V IGBTs
By R. Siemieniec; M. Netzel; R. Herzer [View]
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Abstract: This paper presents a comparison study of PT- and NPT-IGBTs with a blocking voltage of 600V using two dimensional device simulation. The devices are simulated within a realistic external circuit in order to study the tradeoff between total power losses and switching frequency at various temperatures. The results are compared with published data from available PT-IGBTs. It is concluded that the 600V NPT structure is able to compete with the PT structure, but it needs an advanced manufacturing technology for thin wafer handling.

   AN INVESTIGATION OF THE TURN-OFF CHARACTERISTICS OF AN IGBT UNDER SHORT CIRCUIT CONDITIONS
By P. W. Wheeler; C. Newton [View]
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Abstract: This paper considers the safe and controlled turn oil of an IGBT under short circuit conditions. The use of an intermediate voltage level to form a t\\O stage turn off under this condition is investigated. The optimisation of this intermediate step is discussed, with experimental results to demonstrate its affect. Practical results for a range of 150A, 1200V devices are presented and their individual behaviour compared.

   Switching Balancement Of Series Connected Insulated Gate Devices By Gate Control Strategy
By M. Melito; G. Belverde; A. Galluzzo; S. Musumeci [View]
[Download]

Abstract: IGBT and Power MOSFET devices are increasingly used in high voltage power converters because of their ability to handle high power as well as they are easy to control. The market offers a wide range of devices covering the requirements Qf power applications up to several KVolts. A common lack, however, is in the switching losses that considerably increase with the voltage handling capability, thus limiting the switching frequency. An alternative solution is the series connection of two or more devices, with a lower breakdown voltage, driven by a suitable circuit able to share the voltage across the devices. This paper describes a novel approach· operating by the management of the gate capacitance charge. The main advantages. of the proposed method consist in avoiding the use of balancement capacitance, in the output power side, and in controlling only the gate drive signal. The application of this technique is demonstrated and discussed by an active control of two insulated gate devices connected in series.

EPE 1997 – 75: Dialogue Session DS1e-1: CHARACTERIZATION AND APPLICATIONS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 75: Dialogue Session DS1e-1: CHARACTERIZATION AND APPLICATIONS
	[return to parent folder]

	DYNAMICS BEHAVIOUR OF PUNCH-THROUGH IGBT IN HARD-SWITCHING CONVERTERS AT HIGH TEMPERATURE By S. Azzopardi; C. Jamet; J.-M. Vinassa; C. Zardini	[View] [Download]
Abstract: Rising temperature causes many changes in power transistor behaviour. Both electrical and internal physical characteristics of the device behaviour are modified. This paper gives an analysis of the temperature influence on dynamics switching of PunchThrough IGBT behaviour in a hard-switching converter. The internal physical and electrical investigation is done by comparison between the experiment and the simulation results. Simulated results in good agreement with experimental results allow to understand the internal physical behaviour of the device. We show that the increasing temperature influences turn-off of the device whereas this effect is reduced during turn-on.

	IGBT MODULES WORKING AT CRYOGENIC TEMPERATURE By F. Rosenbauer; H. W. Lorenzen	[View] [Download]
Abstract: For the use in superconducting magnetic energy storage (SMES) systems the static and dynamic behaviour of IGBT modules in the temperature range from 5 to 300 K was investigated. A complex experimental setup was used for testing IGBT modules rated for 300- 500 A in single and parallel operation. The electric measurements of the modules covered the static forward characteristic, the switching, the blocking voltage and the characteristic of the integrated inverse diode. The experiments showed that the devices have a very different temperature behaviour, which is caused by their varying design. Only modules of the non-punch-through type can work over the whole temperature range and even different non-punch-through designs result in very distinct behaviour. Based on these results a semiconductor switch working at 5 K was developed.

	EFFECT OF THE PHYSICAL STRUCTURE ON THE RECOVERY SOFTNESS OF PIN DIODES: EXPERIMENTAL AND NUMERICAL ANALYSIS By M. Pasqualetti; M. Portesine; R. Scicolone; B. Zerbinati; R. Menozzi; A. Bellini; P. Cova	[View] [Download]
Abstract: In order to investigate the effect of physical and structural features on the softness of PIN power fast diode reverse recovery, a large matrix of test devices has been designed covering the relevant ranges of resistivity, intrinsic base width and lifetime. Experimental data have been successfully compared with simulated results obtained with a drift diffusion numerical simulator.

	SERIES AND PARALLEL OPERATING OF MOS CONTROLLED THYRISTOR By A. Merazga; J.M. Li; D. Lafore	[View] [Download]
Abstract: The Mos Controlled Thyristor is a new power device seeking its place in the field of power electronic applications. By comparison with IGBTs, the component can offer many advantages, such as low on-state voltage and high current density. To achieve higher voltage and current switches with MCTs, it is necessary to arrange them in series and parallel operating modes. The aim of this paper is to present an experimental analysis of the behavior of the PMCT, mounted either in series or parallel, under inductive switching conditions.

	COMPARISON OF PT AND NPT CELL CONCEPT FOR 600V IGBTs By R. Siemieniec; M. Netzel; R. Herzer	[View] [Download]
Abstract: This paper presents a comparison study of PT- and NPT-IGBTs with a blocking voltage of 600V using two dimensional device simulation. The devices are simulated within a realistic external circuit in order to study the tradeoff between total power losses and switching frequency at various temperatures. The results are compared with published data from available PT-IGBTs. It is concluded that the 600V NPT structure is able to compete with the PT structure, but it needs an advanced manufacturing technology for thin wafer handling.

	AN INVESTIGATION OF THE TURN-OFF CHARACTERISTICS OF AN IGBT UNDER SHORT CIRCUIT CONDITIONS By P. W. Wheeler; C. Newton	[View] [Download]
Abstract: This paper considers the safe and controlled turn oil of an IGBT under short circuit conditions. The use of an intermediate voltage level to form a t\\O stage turn off under this condition is investigated. The optimisation of this intermediate step is discussed, with experimental results to demonstrate its affect. Practical results for a range of 150A, 1200V devices are presented and their individual behaviour compared.

	Switching Balancement Of Series Connected Insulated Gate Devices By Gate Control Strategy By M. Melito; G. Belverde; A. Galluzzo; S. Musumeci	[View] [Download]
Abstract: IGBT and Power MOSFET devices are increasingly used in high voltage power converters because of their ability to handle high power as well as they are easy to control. The market offers a wide range of devices covering the requirements Qf power applications up to several KVolts. A common lack, however, is in the switching losses that considerably increase with the voltage handling capability, thus limiting the switching frequency. An alternative solution is the series connection of two or more devices, with a lower breakdown voltage, driven by a suitable circuit able to share the voltage across the devices. This paper describes a novel approach· operating by the management of the gate capacitance charge. The main advantages. of the proposed method consist in avoiding the use of balancement capacitance, in the output power side, and in controlling only the gate drive signal. The application of this technique is demonstrated and discussed by an active control of two insulated gate devices connected in series.