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IGBT MODULES WORKING AT CRYOGENIC TEMPERATURE
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| Author(s) |
F. Rosenbauer; H. W. Lorenzen |
| Abstract |
For the use in superconducting magnetic energy storage (SMES) systems the static and dynamic behaviour of IGBT modules in the temperature range from 5 to 300 K was investigated. A complex experimental setup was used for testing IGBT modules rated for 300- 500 A in single
and parallel operation. The electric measurements of the modules covered the static forward characteristic, the switching, the blocking voltage and the characteristic of the integrated inverse
diode. The experiments showed that the devices have a very different temperature behaviour, which is
caused by their varying design. Only modules of the non-punch-through type can work over the whole temperature range and even different non-punch-through designs result in very distinct
behaviour. Based on these results a semiconductor switch working at 5 K was developed. |
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| Filename: | Unnamed file |
| Filesize: | 575.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-03-09 by System |
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