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COMPARISON OF PT AND NPT CELL CONCEPT FOR 600V IGBTs
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| Author(s) |
R. Siemieniec; M. Netzel; R. Herzer |
| Abstract |
This paper presents a comparison study of PT- and NPT-IGBTs with a blocking voltage of 600V using two
dimensional device simulation. The devices are simulated within a realistic external circuit in order to study the tradeoff between total power losses and switching frequency at various temperatures. The results are compared with published data from available PT-IGBTs. It is concluded that the 600V NPT structure is able to compete with the PT structure, but it needs an advanced manufacturing technology for thin wafer handling. |
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| Filename: | Unnamed file |
| Filesize: | 436.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-03-09 by System |
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