| Abstract |
The Mos Controlled Thyristor is a new power device seeking its place in the field of power electronic applications. By comparison with IGBTs, the component can offer many advantages, such as low on-state voltage and high current density. To achieve higher voltage and current switches with MCTs, it is necessary to arrange them in series and parallel operating
modes. The aim of this paper is to present an experimental analysis of the behavior of the PMCT, mounted either in series or parallel, under inductive switching conditions. |
