EPE Association: EPE 2013 - DS2a: Silicon Power Devices

EPE 2013 - DS2a: Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - DS2a: Silicon Power Devices

   [return to parent folder]

   A New High Voltage Shorted-anode IGBT with Intrinsic Body Diode Improves Performance of Single-ended Induction Cooker
By Jae-Eul YEON, Min-Young PARK, Kyu-Min CHO, Hee-Jun KIM [View]
[Download]

Abstract: Nowadays the field-stop (FS) IGBT provides lower saturation voltage drop and lower switching losses than the conventional non-punch-through (NPT) IGBT, making the FS IGBT well suited for induction heating (IH) applications. A relatively recent improvement in the FS IGBT—the integration of an anti-parallel diode on the IGBT die through use of the shorted-anode (SA) technology—made the FS IGBT even better for IH designs. The aim of this paper is to demonstrate the effectiveness of Fairchild semiconductor’s second generation FS SA trench IGBT. Although the new device combines both IGBT and body diode functions, it can provide better performances by means of an advanced field stop trench IGBT technology. The single-ended (SE) resonant inverter for induction cooking application is analyzed and experiments for two 2kW SE induction cookers were carried out to verify the validity of new IGBT.

   BIGT control optimisation for overall loss reduction
By Charalampos PAPADOPOULOS, Raffael SCHNELL, Liutauras STORASTA, Munaf RAHIMO, Andreas BASCHNAGEL, Manuel LE-GALLO [View]
[Download]

Abstract: In this paper we present the latest results of utilizing MOS-control (MOSctrl) to optimize the performance of the Bi-mode Insulated Gate Transistor (BIGT) chip. The adaption of the BIGT technology enables higher output power per footprint. However, to enable the full performance benefit of the BIGT, the optimisation of the known standard MOS gate control is necessary. This optimisation is being demonstrated over the whole current and temperature range for the BIGT diode turn-off and BIGT turn-on operation. It is shown that the optimum control can offer a performance increase up to 20\% for high voltage devices.

   Current mismatch during switching due to the self-turn-off effect in paralleled IGBT
By Juergen BOEHMER, Karl FLEISCH, Joerg SCHUMANN, Hans-Guenter ECKEL [View]
[Download]

Abstract: IGBT are the most important power semiconductor in high power converter up to the MW range. To reduce the switching losses, Field-Stop-IGBTs are used in high voltage applications in comparison with Non-Punch-Through-IGBTs. To increase the current carrying capacity of converters, for example in high power traction applications, it is common to connect IGBTs in parallel. Gate drive circuits for paralleled IGBTs often use separate gate resistors for each IGBT to avoid oscillations between the gates of these IGBTs. This decoupling of the gates may lead to a complete current mismatch during turn-off of field-stop IGBTs. The reason for this is the self-turn-off of the IGBT, whose space-charge-region (SCR) reaches the field-stop layer at first. To explain the effect of current mismatch of paralleled IGBTs it is important to understand the self-turn-off process and what happens, if an IGBT reaches the field-stop layer during turn-off. Under some conditions it is possible that the IGBT gets a parasitic turn-on behavior if the electrical field becomes trapezoidal. This paper explains these two effects and translate the results to the current mismatch of paralleled IGBTs.

   Degradation of Power Semiconductor Modules for Trains.
By Tenko FUKUDA [View]
[Download]

Abstract: Various electronic equipment including traction converters is installed in railway vehicles. It is important to improve the reliability of each element constituting the equipment. To obtain the data required for the maintenance and renewal work of traction converters mounted on recent EMUs, we developed a new method to estimate the degradation of power semiconductor modules, which are one of the parts of the converters. In this paper, the results of thermal resistance measurements are reported and degradation estimation for high-voltage / high-current IGBT modules is discussed.

   Experimental evaluation of a 600 V Super-Junction Planar PT IGBT prototype - Comparison with Planar PT and Trench Gate PT Technologies
By Lorenzo Maurizio SELGI, Leonardo FRAGAPANE [View]
[Download]

Abstract: We report, for the first time, an experimental electrical characterization of a super-junction PT IGBT feasibility study on applying the charge compensation device concept to a planar punch-through IGBT. We also performed a comparison both with a planar PT IGBT and a trench gate PT IGBT.

   Features of wafer - Mo joining by sintering of silver paste for large area silicon devices
By Alexey SURMA, Anatoly CHERNIKOV, Alexander STAVTSEV [View]
[Download]

Abstract: Conjunction of silicon crystals with surface over 10 cm² with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is necessary to ensure thermal stability of multilayer metal process on jointed surfaces. Experimental elements are characterized by reduced thermal resistance and high cycle stability.

   Measurements and Simulations of the Turn-Off Behaviour of Diodes with Deep Energy Levels of Se implanted in Si
By Eric PERTERMANN, Josef LUTZ, Markus ARNOLD, Dietrich R.T. ZAHN, Hans-Joachim SCHULZE, Hans-Peter FELSL, Franz-Josef NIEDERNOSTHEIDE [View]
[Download]

Abstract: The switching softness of high-voltage power diodes is significantly influenced by the design of the field-stop layer and its dopant atoms. The influence of the energy levels of selenium – used as donor in the field-stop layer – on the turn-off behaviour of CIBH diodes has been investigated by DLTS-measurements and device simulations.

   Optimisation of Quasi-resonant Induction Cookers
By Iraj SHEIKHIAN, Nando KAMINSKI, Stephan VOSS, Wolfgang SCHOLZ, Elmar HERWEG [View]
[Download]

Abstract: In this paper, the optimisation possibilities of a quasi-resonant induction cooker are investigated. Simulations show that main losses of the induction cooker occur in the heating coil and the RC-IGBT (power switch). The performance of the coil can be improved mainly by minimising the coil resistance. The IGBT-optimisation is based on the reduction of tail current in soft switching mode. The tail current is reduced by using lifetime engineering and reduction of the IGBT-thickness. The losses of the optimised IGBT are about 30\% lower. As a result, the cooling system of the IGBT can be smaller and cheaper. Together with some optimisations of the circuit the overall losses of the system could be improved by almost 10\% or 1 percentage point.

   Process development and proton implanted n-type buffer optimization for 1700V rated thin wafer fast recovery diodes
By Maolong KE, Ian DEVINY, Rongzhen QIN, Lee COULBECK, Gary LIU [View]
[Download]

Abstract: Developing suitable processes for thin wafer fast recovery power diodes is important for modern production plants as the substrate dimension increases. A set of emerging technologies has been employed here in order to fabricate 1700V rated fast recovery diodes from standard Si IGBT substrates without pre-diffused backside n-type buffer. Wafer grinding, n+ back surface contact implant, laser annealing and multiple proton implantations were all employed here for the diode fabrication. Detailed processing parameters for each step were carefully selected and optimized for the fabrication. Both SRIM and Silvaco simulations were carried out to initially provide theoretical guide for experimental design and later compared with measured results. The fabricated diodes were tested under both static and dynamic recovery conditions. The results demonstrate that the processing technologies used here are capable of making fast recovery diodes from standard IGBT substrates.

   Top-metal ageing effects on electro-thermal distributions in an IGBT chip under short circuit conditions.
By Jeff MOUSSODJI, Zoubir KHATIR, Thierry KOCINIEWSKI [View]
[Download]

Abstract: A new electro-thermal model of a semiconductor device has been carried-out in order to investigate electrical and thermal mappings of power devices during critical operations. This model allows evaluating the effect of chip metallization ageing on temperature distributions and current sharing between cells within an IGBT chip during short-circuits operations. One of the failure mechanisms in IGBT is due to the switch on of the npnp parasitic thyristor. This phenomenon so called Latch-up and often illustrated as a drastic increasing of the total current in the power IGBT leads in many cases to the destruction of the device. By taking into account, in the model, the parasitic inductance, IGBT dynamic latch-up will be performed and simulation results will be compared to experimental one.

EPE 2013 - DS2a: Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - DS2a: Silicon Power Devices
	[return to parent folder]

	A New High Voltage Shorted-anode IGBT with Intrinsic Body Diode Improves Performance of Single-ended Induction Cooker By Jae-Eul YEON, Min-Young PARK, Kyu-Min CHO, Hee-Jun KIM	[View] [Download]
Abstract: Nowadays the field-stop (FS) IGBT provides lower saturation voltage drop and lower switching losses than the conventional non-punch-through (NPT) IGBT, making the FS IGBT well suited for induction heating (IH) applications. A relatively recent improvement in the FS IGBT—the integration of an anti-parallel diode on the IGBT die through use of the shorted-anode (SA) technology—made the FS IGBT even better for IH designs. The aim of this paper is to demonstrate the effectiveness of Fairchild semiconductor’s second generation FS SA trench IGBT. Although the new device combines both IGBT and body diode functions, it can provide better performances by means of an advanced field stop trench IGBT technology. The single-ended (SE) resonant inverter for induction cooking application is analyzed and experiments for two 2kW SE induction cookers were carried out to verify the validity of new IGBT.

	BIGT control optimisation for overall loss reduction By Charalampos PAPADOPOULOS, Raffael SCHNELL, Liutauras STORASTA, Munaf RAHIMO, Andreas BASCHNAGEL, Manuel LE-GALLO	[View] [Download]
Abstract: In this paper we present the latest results of utilizing MOS-control (MOSctrl) to optimize the performance of the Bi-mode Insulated Gate Transistor (BIGT) chip. The adaption of the BIGT technology enables higher output power per footprint. However, to enable the full performance benefit of the BIGT, the optimisation of the known standard MOS gate control is necessary. This optimisation is being demonstrated over the whole current and temperature range for the BIGT diode turn-off and BIGT turn-on operation. It is shown that the optimum control can offer a performance increase up to 20\% for high voltage devices.

	Current mismatch during switching due to the self-turn-off effect in paralleled IGBT By Juergen BOEHMER, Karl FLEISCH, Joerg SCHUMANN, Hans-Guenter ECKEL	[View] [Download]
Abstract: IGBT are the most important power semiconductor in high power converter up to the MW range. To reduce the switching losses, Field-Stop-IGBTs are used in high voltage applications in comparison with Non-Punch-Through-IGBTs. To increase the current carrying capacity of converters, for example in high power traction applications, it is common to connect IGBTs in parallel. Gate drive circuits for paralleled IGBTs often use separate gate resistors for each IGBT to avoid oscillations between the gates of these IGBTs. This decoupling of the gates may lead to a complete current mismatch during turn-off of field-stop IGBTs. The reason for this is the self-turn-off of the IGBT, whose space-charge-region (SCR) reaches the field-stop layer at first. To explain the effect of current mismatch of paralleled IGBTs it is important to understand the self-turn-off process and what happens, if an IGBT reaches the field-stop layer during turn-off. Under some conditions it is possible that the IGBT gets a parasitic turn-on behavior if the electrical field becomes trapezoidal. This paper explains these two effects and translate the results to the current mismatch of paralleled IGBTs.

	Degradation of Power Semiconductor Modules for Trains. By Tenko FUKUDA	[View] [Download]
Abstract: Various electronic equipment including traction converters is installed in railway vehicles. It is important to improve the reliability of each element constituting the equipment. To obtain the data required for the maintenance and renewal work of traction converters mounted on recent EMUs, we developed a new method to estimate the degradation of power semiconductor modules, which are one of the parts of the converters. In this paper, the results of thermal resistance measurements are reported and degradation estimation for high-voltage / high-current IGBT modules is discussed.

	Experimental evaluation of a 600 V Super-Junction Planar PT IGBT prototype - Comparison with Planar PT and Trench Gate PT Technologies By Lorenzo Maurizio SELGI, Leonardo FRAGAPANE	[View] [Download]
Abstract: We report, for the first time, an experimental electrical characterization of a super-junction PT IGBT feasibility study on applying the charge compensation device concept to a planar punch-through IGBT. We also performed a comparison both with a planar PT IGBT and a trench gate PT IGBT.

	Features of wafer - Mo joining by sintering of silver paste for large area silicon devices By Alexey SURMA, Anatoly CHERNIKOV, Alexander STAVTSEV	[View] [Download]
Abstract: Conjunction of silicon crystals with surface over 10 cm² with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is necessary to ensure thermal stability of multilayer metal process on jointed surfaces. Experimental elements are characterized by reduced thermal resistance and high cycle stability.

	Measurements and Simulations of the Turn-Off Behaviour of Diodes with Deep Energy Levels of Se implanted in Si By Eric PERTERMANN, Josef LUTZ, Markus ARNOLD, Dietrich R.T. ZAHN, Hans-Joachim SCHULZE, Hans-Peter FELSL, Franz-Josef NIEDERNOSTHEIDE	[View] [Download]
Abstract: The switching softness of high-voltage power diodes is significantly influenced by the design of the field-stop layer and its dopant atoms. The influence of the energy levels of selenium – used as donor in the field-stop layer – on the turn-off behaviour of CIBH diodes has been investigated by DLTS-measurements and device simulations.

	Optimisation of Quasi-resonant Induction Cookers By Iraj SHEIKHIAN, Nando KAMINSKI, Stephan VOSS, Wolfgang SCHOLZ, Elmar HERWEG	[View] [Download]
Abstract: In this paper, the optimisation possibilities of a quasi-resonant induction cooker are investigated. Simulations show that main losses of the induction cooker occur in the heating coil and the RC-IGBT (power switch). The performance of the coil can be improved mainly by minimising the coil resistance. The IGBT-optimisation is based on the reduction of tail current in soft switching mode. The tail current is reduced by using lifetime engineering and reduction of the IGBT-thickness. The losses of the optimised IGBT are about 30\% lower. As a result, the cooling system of the IGBT can be smaller and cheaper. Together with some optimisations of the circuit the overall losses of the system could be improved by almost 10\% or 1 percentage point.

	Process development and proton implanted n-type buffer optimization for 1700V rated thin wafer fast recovery diodes By Maolong KE, Ian DEVINY, Rongzhen QIN, Lee COULBECK, Gary LIU	[View] [Download]
Abstract: Developing suitable processes for thin wafer fast recovery power diodes is important for modern production plants as the substrate dimension increases. A set of emerging technologies has been employed here in order to fabricate 1700V rated fast recovery diodes from standard Si IGBT substrates without pre-diffused backside n-type buffer. Wafer grinding, n+ back surface contact implant, laser annealing and multiple proton implantations were all employed here for the diode fabrication. Detailed processing parameters for each step were carefully selected and optimized for the fabrication. Both SRIM and Silvaco simulations were carried out to initially provide theoretical guide for experimental design and later compared with measured results. The fabricated diodes were tested under both static and dynamic recovery conditions. The results demonstrate that the processing technologies used here are capable of making fast recovery diodes from standard IGBT substrates.

	Top-metal ageing effects on electro-thermal distributions in an IGBT chip under short circuit conditions. By Jeff MOUSSODJI, Zoubir KHATIR, Thierry KOCINIEWSKI	[View] [Download]
Abstract: A new electro-thermal model of a semiconductor device has been carried-out in order to investigate electrical and thermal mappings of power devices during critical operations. This model allows evaluating the effect of chip metallization ageing on temperature distributions and current sharing between cells within an IGBT chip during short-circuits operations. One of the failure mechanisms in IGBT is due to the switch on of the npnp parasitic thyristor. This phenomenon so called Latch-up and often illustrated as a drastic increasing of the total current in the power IGBT leads in many cases to the destruction of the device. By taking into account, in the model, the parasitic inductance, IGBT dynamic latch-up will be performed and simulation results will be compared to experimental one.