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Current mismatch during switching due to the self-turn-off effect in paralleled IGBT
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| Author(s) |
Juergen BOEHMER, Karl FLEISCH, Joerg SCHUMANN, Hans-Guenter ECKEL |
| Abstract |
IGBT are the most important power semiconductor in high power converter up to the MW range. To reduce the switching losses, Field-Stop-IGBTs are used in high voltage applications in comparison with Non-Punch-Through-IGBTs. To increase the current carrying capacity of converters, for example in high power traction applications, it is common to connect IGBTs in parallel. Gate drive circuits for paralleled IGBTs often use separate gate resistors for each IGBT to avoid oscillations between the gates of these IGBTs. This decoupling of the gates may lead to a complete current mismatch during turn-off of field-stop IGBTs. The reason for this is the self-turn-off of the IGBT, whose space-charge-region (SCR) reaches the field-stop layer at first. To explain the effect of current mismatch of paralleled IGBTs it is important to understand the self-turn-off process and what happens, if an IGBT reaches the field-stop layer during turn-off. Under some conditions it is possible that the IGBT gets a parasitic turn-on behavior if the electrical field becomes trapezoidal. This paper explains these two effects and translate the results to the current mismatch of paralleled IGBTs. |
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| Filename: | 0062-epe2013-full-17571168.pdf |
| Filesize: | 488.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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