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Measurements and Simulations of the Turn-Off Behaviour of Diodes with Deep Energy Levels of Se implanted in Si
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| Author(s) |
Eric PERTERMANN, Josef LUTZ, Markus ARNOLD, Dietrich R.T. ZAHN, Hans-Joachim SCHULZE, Hans-Peter FELSL, Franz-Josef NIEDERNOSTHEIDE |
| Abstract |
The switching softness of high-voltage power diodes is significantly influenced by the design of the field-stop layer and its dopant atoms. The influence of the energy levels of selenium – used as donor in the field-stop layer – on the turn-off behaviour of CIBH diodes has been investigated by DLTS-measurements and device simulations. |
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| Filename: | 0932-epe2013-full-11424412.pdf |
| Filesize: | 1.065 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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