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A New High Voltage Shorted-anode IGBT with Intrinsic Body Diode Improves Performance of Single-ended Induction Cooker
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| Author(s) |
Jae-Eul YEON, Min-Young PARK, Kyu-Min CHO, Hee-Jun KIM |
| Abstract |
Nowadays the field-stop (FS) IGBT provides lower saturation voltage drop and lower switching losses than the conventional non-punch-through (NPT) IGBT, making the FS IGBT well suited for induction heating (IH) applications. A relatively recent improvement in the FS IGBT—the integration of an anti-parallel diode on the IGBT die through use of the shorted-anode (SA) technology—made the FS IGBT even better for IH designs. The aim of this paper is to demonstrate the effectiveness of Fairchild semiconductor’s second generation FS SA trench IGBT. Although the new device combines both IGBT and body diode functions, it can provide better performances by means of an advanced field stop trench IGBT technology. The single-ended (SE) resonant inverter for induction cooking application is analyzed and experiments for two 2kW SE induction cookers were carried out to verify the validity of new IGBT. |
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| Filename: | 0022-epe2013-full-08323366.pdf |
| Filesize: | 943.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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