EPE Association: EPE 2011 - DS1g: Topic 01: Wide Bandgap Power Semiconductor Devices

EPE 2011 - DS1g: Topic 01: Wide Bandgap Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - DS1g: Topic 01: Wide Bandgap Power Semiconductor Devices

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   A Multi-Physics Model of the VJFET With a Lateral Channel
By Hervé MOREL, Youness HAMIEH, Dominique TOURNIER, Rémi ROBUTEL, Fabien DUBOIS, Damien RISALETTO, Christian MARTIN, Dominique BERGOGNE, Cyril BUTTAY, Régis MEURET [View]
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Abstract: A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obvious and it is presented in details. Each junction of the structure is represented as a Shockley pn-junction model in parallel with the associated junction capacitance. The comparison between simulations and experiments yields to satisfying results, both in static and dynamic conditions. The analysis of the remaining difficulties to be solved is given.

   Analysis of Energy Losses for SiC and Si Diodes in Half-bridge Modules and Future Applications
By M. Teresa SIERRA, Igor GABIOLA, Ainhoa PUJANA, Susana APIÑANIZ, Pedro IBAÑEZ [View]
[Download]

Abstract: The aim of this paper is to show the reduction in energy losses obtained through experimentation when making use of Silicon Carbide (SiC) diodes instead of Si ones. In order to make the comparison as much accurate as possible both diodes were developed applying the same bonding and package techniques and were tested under exactly the same working conditions. Experimental voltage and current waveforms during the switching process and energy losses measurements are shown in the paper.

   Demonstration of 25 W/cm3 class All SiC Three Phase Inverter
By Kazuto TAKAO, Takashi SHINOHE [View]
[Download]

Abstract: Silicon-carbide power devices are expected as next generation power devices due to their superior performances. This paper focuses on a performance evaluation of an all-SiC power converter in terms of high power density. A forced air-cooling type all-SiC three phase inverter has been built with currently available normally-on SiC-JFETs and SiC-SBDs and the feasible power density has been derived. The inverter consists of an all-SiC module, heat sink, cooling fans, dc-link capacitor bank, and gate drive unit. The volume of the inverter is 864 cm3. The power loss of the all-SiC module is measured in continuous operation tests. The experimental results and theoretical loss calculations show that high power density of 25 W / cm3 could be achieved.

   Development of a Boost Converter for PV Systems Based on SiC BJTs
By Andreas HENSEL, Dirk KRANZER, Christian WILHELM [View]
[Download]

Abstract: In the past years new power switching devices based on wide bandgap materials like silicon carbide(SiC) were more and more coming up, promising more efficient, smaller and lighter converter circuits.This paper demonstrates the advantages of the SiC bipolar junction transistor (BJT) by the realisationof a boost converter stage for photovoltaic (PV) systems. First the key attributes (on-state behaviourand switching losses) of the devices are reviewed. By this measurements, the driving circuits in theboost converter are optimized in order to achieve high efficiency. The application of SiC BJTs in a highefficient 5 kW boost converter stage for PV systems (300 V ! 800 V) is demonstrated and the resultsare compared to the results obtained with the application of common silicon (Si) IGBTs.

   First principle and Electrical Simulation with Characterization of GaN/4H-SiC Heterostructure Vertical PN Power Diode
By Srikanta BOSE, Sudip K. MAZUMDER [View]
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Abstract: In this work, we report the characterization results of GaN/4H-SiC heterojunction vertical pn power diode. The diode is realized using four separate epitaxial growth mechanisms: a) direct growth of p-GaN over n-(4H)SiC; b) growth of p-GaN over n-(4H)SiC with AlN as the interface layer; c) growth of p-GaN over n-(4H)SiC with Ga-flux as the interface layer; and d) growth of p-GaN over p-(4H)SiC. The use of less than 2 nm AlN, as the interface material in one of the growth mechanisms is guided from the first principle atomistic simulation study. In all of these four samples, n+-doped (4H)SiC acts as the cathode substrate. For all of the four cases, the metallization for the anode contact is Pd(200 A0)/Au(10000 A0) while Ni(1000 A0) is used for the cathode contact. The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas, it is between 2 V to 3 V for the rest of the three diode samples. The measured reverse-blocking capability of all the four diode samples is found to be greater than 200 V.

   On Understanding and Driving SiC Power JFETs
By Supratim BASU, Tore UNDELAND [View]
[Download]

Abstract: With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.

   Perspectives of high-voltage SiC-semiconductors in high power conversion systems for wind and photovoltaic sources
By Samuel ARAÚJO, Peter ZACHARIAS [View]
[Download]

Abstract: SiC devices become increasingly interesting at higher blocking voltages against their Si-based counterparts in order to reduce losses and obtain cost savings by means of higher switching frequency and low component count. The possible gains along with an overview of related constraints valid at high power levels will be discussed in this publication, taking as example power conversion nstages for photovoltaic and wind energy systems.

   Simulation and Analysis of Low-Resistance AlGaN/GaN HFET Power Switches
By Richard REINER, Fouad BENKHELIFA, Daniel KRAUSSE, Rüdiger QUAY, Oliver AMBACHER [View]
[Download]

Abstract: AlGaN/GaN HFETs yield excellent properties for highly-efficient power-switching devices. A key parameter of highly-efficient switches is the static on-state resistance of the transistor. This paper discusses the main parameters affecting the on-state resistance and in particular the influence of resistive metallization in lateral finger structures and large-area comb structures. Current crowding effects for finger structures are analytically analyzed and compared. Equations are developed and applied in practical examples and verified by two-dimensional finite element simulations. For lateral large-area comb structures different bond configurations are investigated.Furthermore, the two-dimensional simulations method has been applied on real structure layouts of a large-area power switch and the result of this simulation is compared to measurement results

EPE 2011 - DS1g: Topic 01: Wide Bandgap Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - DS1g: Topic 01: Wide Bandgap Power Semiconductor Devices
	[return to parent folder]

	A Multi-Physics Model of the VJFET With a Lateral Channel By Hervé MOREL, Youness HAMIEH, Dominique TOURNIER, Rémi ROBUTEL, Fabien DUBOIS, Damien RISALETTO, Christian MARTIN, Dominique BERGOGNE, Cyril BUTTAY, Régis MEURET	[View] [Download]
Abstract: A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obvious and it is presented in details. Each junction of the structure is represented as a Shockley pn-junction model in parallel with the associated junction capacitance. The comparison between simulations and experiments yields to satisfying results, both in static and dynamic conditions. The analysis of the remaining difficulties to be solved is given.

	Analysis of Energy Losses for SiC and Si Diodes in Half-bridge Modules and Future Applications By M. Teresa SIERRA, Igor GABIOLA, Ainhoa PUJANA, Susana APIÑANIZ, Pedro IBAÑEZ	[View] [Download]
Abstract: The aim of this paper is to show the reduction in energy losses obtained through experimentation when making use of Silicon Carbide (SiC) diodes instead of Si ones. In order to make the comparison as much accurate as possible both diodes were developed applying the same bonding and package techniques and were tested under exactly the same working conditions. Experimental voltage and current waveforms during the switching process and energy losses measurements are shown in the paper.

	Demonstration of 25 W/cm3 class All SiC Three Phase Inverter By Kazuto TAKAO, Takashi SHINOHE	[View] [Download]
Abstract: Silicon-carbide power devices are expected as next generation power devices due to their superior performances. This paper focuses on a performance evaluation of an all-SiC power converter in terms of high power density. A forced air-cooling type all-SiC three phase inverter has been built with currently available normally-on SiC-JFETs and SiC-SBDs and the feasible power density has been derived. The inverter consists of an all-SiC module, heat sink, cooling fans, dc-link capacitor bank, and gate drive unit. The volume of the inverter is 864 cm3. The power loss of the all-SiC module is measured in continuous operation tests. The experimental results and theoretical loss calculations show that high power density of 25 W / cm3 could be achieved.

	Development of a Boost Converter for PV Systems Based on SiC BJTs By Andreas HENSEL, Dirk KRANZER, Christian WILHELM	[View] [Download]
Abstract: In the past years new power switching devices based on wide bandgap materials like silicon carbide(SiC) were more and more coming up, promising more efficient, smaller and lighter converter circuits.This paper demonstrates the advantages of the SiC bipolar junction transistor (BJT) by the realisationof a boost converter stage for photovoltaic (PV) systems. First the key attributes (on-state behaviourand switching losses) of the devices are reviewed. By this measurements, the driving circuits in theboost converter are optimized in order to achieve high efficiency. The application of SiC BJTs in a highefficient 5 kW boost converter stage for PV systems (300 V ! 800 V) is demonstrated and the resultsare compared to the results obtained with the application of common silicon (Si) IGBTs.

	First principle and Electrical Simulation with Characterization of GaN/4H-SiC Heterostructure Vertical PN Power Diode By Srikanta BOSE, Sudip K. MAZUMDER	[View] [Download]
Abstract: In this work, we report the characterization results of GaN/4H-SiC heterojunction vertical pn power diode. The diode is realized using four separate epitaxial growth mechanisms: a) direct growth of p-GaN over n-(4H)SiC; b) growth of p-GaN over n-(4H)SiC with AlN as the interface layer; c) growth of p-GaN over n-(4H)SiC with Ga-flux as the interface layer; and d) growth of p-GaN over p-(4H)SiC. The use of less than 2 nm AlN, as the interface material in one of the growth mechanisms is guided from the first principle atomistic simulation study. In all of these four samples, n+-doped (4H)SiC acts as the cathode substrate. For all of the four cases, the metallization for the anode contact is Pd(200 A0)/Au(10000 A0) while Ni(1000 A0) is used for the cathode contact. The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas, it is between 2 V to 3 V for the rest of the three diode samples. The measured reverse-blocking capability of all the four diode samples is found to be greater than 200 V.

	On Understanding and Driving SiC Power JFETs By Supratim BASU, Tore UNDELAND	[View] [Download]
Abstract: With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.

	Perspectives of high-voltage SiC-semiconductors in high power conversion systems for wind and photovoltaic sources By Samuel ARAÚJO, Peter ZACHARIAS	[View] [Download]
Abstract: SiC devices become increasingly interesting at higher blocking voltages against their Si-based counterparts in order to reduce losses and obtain cost savings by means of higher switching frequency and low component count. The possible gains along with an overview of related constraints valid at high power levels will be discussed in this publication, taking as example power conversion nstages for photovoltaic and wind energy systems.

	Simulation and Analysis of Low-Resistance AlGaN/GaN HFET Power Switches By Richard REINER, Fouad BENKHELIFA, Daniel KRAUSSE, Rüdiger QUAY, Oliver AMBACHER	[View] [Download]
Abstract: AlGaN/GaN HFETs yield excellent properties for highly-efficient power-switching devices. A key parameter of highly-efficient switches is the static on-state resistance of the transistor. This paper discusses the main parameters affecting the on-state resistance and in particular the influence of resistive metallization in lateral finger structures and large-area comb structures. Current crowding effects for finger structures are analytically analyzed and compared. Equations are developed and applied in practical examples and verified by two-dimensional finite element simulations. For lateral large-area comb structures different bond configurations are investigated.Furthermore, the two-dimensional simulations method has been applied on real structure layouts of a large-area power switch and the result of this simulation is compared to measurement results