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Simulation and Analysis of Low-Resistance AlGaN/GaN HFET Power Switches
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| Author(s) |
Richard REINER, Fouad BENKHELIFA, Daniel KRAUSSE, Rüdiger QUAY, Oliver AMBACHER |
| Abstract |
AlGaN/GaN HFETs yield excellent properties for highly-efficient power-switching devices. A key parameter of highly-efficient switches is the static on-state resistance of the transistor. This paper discusses the main parameters affecting the on-state resistance and in particular the influence of resistive metallization in lateral finger structures and large-area comb structures. Current crowding effects for finger structures are analytically analyzed and compared. Equations are developed and applied in practical examples and verified by two-dimensional finite element simulations. For lateral large-area comb structures different bond configurations are investigated.Furthermore, the two-dimensional simulations method has been applied on real structure layouts of a large-area power switch and the result of this simulation is compared to measurement results |
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| Filename: | 0570-epe2011-full-18562299.pdf |
| Filesize: | 466.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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