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First principle and Electrical Simulation with Characterization of GaN/4H-SiC Heterostructure Vertical PN Power Diode
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| Author(s) |
Srikanta BOSE, Sudip K. MAZUMDER |
| Abstract |
In this work, we report the characterization results of GaN/4H-SiC heterojunction vertical pn power diode. The diode is realized using four separate epitaxial growth mechanisms: a) direct growth of p-GaN over n-(4H)SiC; b) growth of p-GaN over n-(4H)SiC with AlN as the interface layer; c) growth of p-GaN over n-(4H)SiC with Ga-flux as the interface layer; and d) growth of p-GaN over p-(4H)SiC. The use of less than 2 nm AlN, as the interface material in one of the growth mechanisms is guided from the first principle atomistic simulation study. In all of these four samples, n+-doped (4H)SiC acts as the cathode substrate. For all of the four cases, the metallization for the anode contact is Pd(200 A0)/Au(10000 A0) while Ni(1000 A0) is used for the cathode contact. The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas, it is between 2 V to 3 V for the rest of the three diode samples. The measured reverse-blocking capability of all the four diode samples is found to be greater than 200 V. |
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| Filename: | 0895-epe2011-full-18225265.pdf |
| Filesize: | 1.36 MB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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