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On Understanding and Driving SiC Power JFETs
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| Author(s) |
Supratim BASU, Tore UNDELAND |
| Abstract |
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them. |
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| Filename: | 0785-epe2011-full-05503604.pdf |
| Filesize: | 442.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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