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Development of a Boost Converter for PV Systems Based on SiC BJTs
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| Author(s) |
Andreas HENSEL, Dirk KRANZER, Christian WILHELM |
| Abstract |
In the past years new power switching devices based on wide bandgap materials like silicon carbide(SiC) were more and more coming up, promising more efficient, smaller and lighter converter circuits.This paper demonstrates the advantages of the SiC bipolar junction transistor (BJT) by the realisationof a boost converter stage for photovoltaic (PV) systems. First the key attributes (on-state behaviourand switching losses) of the devices are reviewed. By this measurements, the driving circuits in theboost converter are optimized in order to achieve high efficiency. The application of SiC BJTs in a highefficient 5 kW boost converter stage for PV systems (300 V ! 800 V) is demonstrated and the resultsare compared to the results obtained with the application of common silicon (Si) IGBTs. |
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| Filename: | 0685-epe2011-full-09470012.pdf |
| Filesize: | 1.181 MB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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