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EPE Journal Volume 02-2 - Papers
- Advanced Drive Systems and Infrastructure for Electric or Hybrid Buses, Vans and Passenger Cars (I)
- MOS-controlled Power Semiconductor Components for Voltages from 50 V to 2000 V
- Investigation of Temperature Effects on Fast Gold Doped High Voltage Rectifiers
- A Single Critical Mask Process for Manufacturing Very Large Area MOS-Controlled Power Transistors
- A practical solar pump system
EPE Journal Volume 02-2 - Editorial
By P. Grumbrecht
The Editorial of the EPE Journal Volume 2 N°2, "Half-way between two EPE Conferences", written by Mr. Peter Grumbrecht, Member of EPE Association's International Steering Committee.
EPE Journal Volume 02-2 - Papers
By G. Maggetto
For the next two decades a strong growth of the transportation sector is still to be foreseen, at least 40% by 2015. Not only the infrastructural consequences but also the environmental impacts are dramatic. Therefore, efforts are being developed that strive for reduction of private transportation in favor of public transportation. Another option for a further reduction of the emissions in the inner cities is the substitution of conventional vehicles by electrical transportation system. The large-scale introduction of such a system has a substantial impact on the electricity distribution network and a positive impact on the electricity production. It extends the load levveling effect of night rechargers and uses the base load units better. But electrical transportation is not the only way to reduce the pollution by exhaust gases. Many efforts for developing internal combustion engines with low consuption are taking place for some years and in this respect another of the further options is the combination of electric and internal combustion (i.c.). These drives are called hybrid systems. This solution allows a reduction of consumption for long distances and exhaust free driving in the cities. Hydrogen as fuel for i.c. engines, other liquified gases and fuel cells are also solutions to be considered seriously for the future. They offer a less negative environmental impact. The solutions will result from the best balance between technical and economical considerations and environmental impact taking also into account the less rational impact of social acceptance. This survey paper aims to discribe the state of the art of the different components associaterd with electric and hybrid vehicles i.e. energy sources, power electronics and control systems, motors and battery charging infrastructure. Due to the fact that this technology is not yet strongly widespread, a discussion of the reason why it attracts now so much attention and development efforts will be performed initially.
To be continued in EPE Journal Volume 1992-3 and EPE Journal Volume 1992-4.
By L. Lorenz
IGBTs are becoming the most widely used components in medium power applications. They are taking over most of the application fields of power MOSFETS and bipolar transistors. As power MOSFETS will stay on the market for equipment working with voltage input lower than 100 V, darlingtons will disappear and be replaced by IGBT. Currently available IGBTs range from 600 V to 1600 V. Further developments are expected up to 2000 V or even 2500 V. They can be of the "low sat" type or "high speed" type or "new generation". The difference lies in the saturation voltage and the tail charge. The IGBT is a very promising component and a correct use of his characteristics allows for the design of very efficient and reliable equipment.
By S. H. Gamal; M. L. Locatelli; J. P. Chante
The electrical behaviour of high voltage gold doped p-i-n rectifiers has been examined and analysed over a wide range of temperature. Representative experimental results from the three different gold doped diodes are reported. The temperature dependence of measured static and dynamic characteristics is introduced and interpreted using simple p-i-n diode models. The breakdown voltage is also determined and unexpectedly found to be seriously degraded at high temperature. The determination of the multiplication factors showed that such degradation is due to the increase of the thermal generation current in the wide space charge region of reverse biased high voltage diodes near the breakdown voltage.
By D. W. Tsang
The ability to remove heat from a device constitutes the most fundamental limitation to the performance of a high power device. Other figures of merit such as response time and ease of control further differentiate one device type from another. In the past, solutions for higher power for MOS devices have meant fine linewidth where incremental packing density improvement chisels away at forward drop. More recently, newer device configurations (IGBTs and MCTs) employing conductivity modulation, higher mobility semiconductors (SiC, III-V compounds, Diamond) are better thermal property packaging materials combine to promise faster and higher power devices in the future. In this paper, the concept of effectively linking processing procedure with device design to permit manufacturing of very large area devices is presented. Large device area is central to high power appliactions.
By R. Hanitsch; R. Belmans
Pumping of water for irrigation purposes or domestic use by employing solar power is quite common in some parts of the world. In ordr to make the pumping system as simple as possible often the DC drive technology is selected. This paper reports about an electronic subsystem for improvin gthe pumping capacity. It is shown how the subsystems are matched in order to optimize the overall behaviour.