The electrical behaviour of high voltage gold doped p-i-n rectifiers has been examined and analysed over a wide range of temperature. Representative experimental results from the three different gold doped diodes are reported. The temperature dependence of measured static and dynamic characteristics is introduced and interpreted using simple p-i-n diode models. The breakdown voltage is also determined and unexpectedly found to be seriously degraded at high temperature. The determination of the multiplication factors showed that such degradation is due to the increase of the thermal generation current in the wide space charge region of reverse biased high voltage diodes near the breakdown voltage.
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