IGBTs are becoming the most widely used components in medium power applications. They are taking over most of the application fields of power MOSFETS and bipolar transistors. As power MOSFETS will stay on the market for equipment working with voltage input lower than 100 V, darlingtons will disappear and be replaced by IGBT. Currently available IGBTs range from 600 V to 1600 V. Further developments are expected up to 2000 V or even 2500 V. They can be of the "low sat" type or "high speed" type or "new generation". The difference lies in the saturation voltage and the tail charge. The IGBT is a very promising component and a correct use of his characteristics allows for the design of very efficient and reliable equipment.
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