EPE Association: EPE 2001 - Topic 01i: Simulation and Modelling of Power Devices

EPE 2001 - Topic 01i: Simulation and Modelling of Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01i: Simulation and Modelling of Power Devices

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   A new SPICE model of VDMOS transistors
By V. d’Alessandro; F.Frisina; N. Rinaldi [View]
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Abstract: This paper presents a new electro-thermal analytical model of VDMOS transistors based on the combination of the Level 3 SPICE model for the intrinsic MOSFET and a simple expression for the drift resistance. It is shown that, despite its simplicity, the model provides a good prediction of the device behaviour in all operating modes over the temperature range [300K-400K], describing static device characteristics also in quasi-saturation conditions. Moreover, this model requires a simple parameter extraction procedure and is suitable to be implemented in the circuit simulator SPICE.

   Dynamic Electro-Thermal Compact Model of Power Diode Dedicated to ...
By P.M. Igic; P.A. Mawby; M.S. Towers [View]
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Abstract: Physically based compact device model of the PiN diode is presented in this paper. For describing correctly static and dynamic behavior of the power diode a new 1-D module for the drift zone (low doped n-base region) is presented which incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, we transformed relatively easy this electric model into the electrothermal model by adding an extra node (thermal node) to the electrical compact model. This thermal node will store information about junction temperature of the active device and it represents a connection between the device and rest of the circuit thermal network.

   Physics-Based Circuit Model for the Charge-Compensated Power-MOSFET
By Arrasch U. Lagies; R. Kraus; A. Schlögl; P. Türkes [View]
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Abstract: A physics-based model is presented for the charge-compensated power MOSFET (CCMOSFET) which is a vertical power MOSFET with very deep p-doped columns inside the drain region. This structure leads to the effect of charge compensation which makes it possible to block very high voltages while the doping of the drain-channel can be held high to obtain a low on-resistance Rds(on). For modeling the device was subdivided in a MOS-part, the drain-region and an integrated reverse-diode. The presented device analysis and the derivation of the model equations are concentrated on the drain region since the structure of this region makes the difference to conventional power MOSFETs. At higher drain-source voltages the cross sectional area of the current is strongly narrowed by the space-charge regions at the pn-junctions. This effect determines the current-voltage characteristics at higher gate and drain voltages and finally results in a current saturation. Furthermore the structure of the CC-MOSFET leads to a large change in the drain-related capacitances when the drain voltage is varied. This can play an important role for the switching behavior of the device. The model of the CC-MOSFET has been implemented in a circuit simulator and the simulations have been compared with measurements for the stationary and transient case. The results show that the model can reproduce the device characteristics and its interaction with circuits even in reverse operation and under extreme temperature conditions.

EPE 2001 - Topic 01i: Simulation and Modelling of Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01i: Simulation and Modelling of Power Devices
	[return to parent folder]

	A new SPICE model of VDMOS transistors By V. d’Alessandro; F.Frisina; N. Rinaldi	[View] [Download]
Abstract: This paper presents a new electro-thermal analytical model of VDMOS transistors based on the combination of the Level 3 SPICE model for the intrinsic MOSFET and a simple expression for the drift resistance. It is shown that, despite its simplicity, the model provides a good prediction of the device behaviour in all operating modes over the temperature range [300K-400K], describing static device characteristics also in quasi-saturation conditions. Moreover, this model requires a simple parameter extraction procedure and is suitable to be implemented in the circuit simulator SPICE.

	Dynamic Electro-Thermal Compact Model of Power Diode Dedicated to ... By P.M. Igic; P.A. Mawby; M.S. Towers	[View] [Download]
Abstract: Physically based compact device model of the PiN diode is presented in this paper. For describing correctly static and dynamic behavior of the power diode a new 1-D module for the drift zone (low doped n-base region) is presented which incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, we transformed relatively easy this electric model into the electrothermal model by adding an extra node (thermal node) to the electrical compact model. This thermal node will store information about junction temperature of the active device and it represents a connection between the device and rest of the circuit thermal network.

	Physics-Based Circuit Model for the Charge-Compensated Power-MOSFET By Arrasch U. Lagies; R. Kraus; A. Schlögl; P. Türkes	[View] [Download]
Abstract: A physics-based model is presented for the charge-compensated power MOSFET (CCMOSFET) which is a vertical power MOSFET with very deep p-doped columns inside the drain region. This structure leads to the effect of charge compensation which makes it possible to block very high voltages while the doping of the drain-channel can be held high to obtain a low on-resistance Rds(on). For modeling the device was subdivided in a MOS-part, the drain-region and an integrated reverse-diode. The presented device analysis and the derivation of the model equations are concentrated on the drain region since the structure of this region makes the difference to conventional power MOSFETs. At higher drain-source voltages the cross sectional area of the current is strongly narrowed by the space-charge regions at the pn-junctions. This effect determines the current-voltage characteristics at higher gate and drain voltages and finally results in a current saturation. Furthermore the structure of the CC-MOSFET leads to a large change in the drain-related capacitances when the drain voltage is varied. This can play an important role for the switching behavior of the device. The model of the CC-MOSFET has been implemented in a circuit simulator and the simulations have been compared with measurements for the stationary and transient case. The results show that the model can reproduce the device characteristics and its interaction with circuits even in reverse operation and under extreme temperature conditions.