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Dynamic Electro-Thermal Compact Model of Power Diode Dedicated to ...
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| Author(s) |
P.M. Igic; P.A. Mawby; M.S. Towers |
| Abstract |
Physically based compact device model of the PiN diode is presented in this paper. For describing
correctly static and dynamic behavior of the power diode a new 1-D module for the drift zone (low
doped n-base region) is presented which incorporates conductivity modulation and non-quasistatic
charge storage effect. Finally, we transformed relatively easy this electric model into the electrothermal
model by adding an extra node (thermal node) to the electrical compact model. This thermal
node will store information about junction temperature of the active device and it represents a
connection between the device and rest of the circuit thermal network. |
| Download |
| Filename: | EPE2001 - PP00715 - Igic.pdf |
| Filesize: | 355.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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