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A new SPICE model of VDMOS transistors
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| Author(s) |
V. d’Alessandro; F.Frisina; N. Rinaldi |
| Abstract |
This paper presents a new electro-thermal analytical model of VDMOS transistors based on the
combination of the Level 3 SPICE model for the intrinsic MOSFET and a simple expression for the
drift resistance. It is shown that, despite its simplicity, the model provides a good prediction of the
device behaviour in all operating modes over the temperature range [300K-400K], describing static
device characteristics also in quasi-saturation conditions. Moreover, this model requires a simple
parameter extraction procedure and is suitable to be implemented in the circuit simulator SPICE. |
| Download |
| Filename: | EPE2001 - PP00793 - Rinaldi.pdf |
| Filesize: | 121.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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