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Physics-Based Circuit Model for the Charge-Compensated Power-MOSFET
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| Author(s) |
Arrasch U. Lagies; R. Kraus; A. Schlögl; P. Türkes |
| Abstract |
A physics-based model is presented for the
charge-compensated power MOSFET (CCMOSFET) which is a vertical power MOSFET with very deep p-doped columns inside the drain region. This structure leads to the effect of charge compensation which makes it possible to block very high voltages while the doping of the drain-channel can be held high to obtain a low on-resistance Rds(on). For modeling the device was subdivided in a MOS-part, the drain-region and an integrated reverse-diode. The presented device analysis and the derivation of the model equations are concentrated on the drain region since the structure of this region makes the difference to conventional power MOSFETs. At higher drain-source voltages the cross sectional area of the current is strongly narrowed by the space-charge regions at the pn-junctions. This effect determines the current-voltage characteristics at higher gate and drain voltages and finally results in a current saturation. Furthermore the structure of the CC-MOSFET leads to a large change in the drain-related capacitances when the drain voltage is varied. This can play an important role for the switching behavior of the device. The model of the CC-MOSFET has been implemented in a circuit simulator and the simulations have been compared with measurements for the stationary and transient case. The results show that the model can reproduce the device characteristics and its
interaction with circuits even in reverse operation and under extreme temperature
conditions. |
| Download |
| Filename: | EPE2001 - PP00071 - Lagies.pdf |
| Filesize: | 254.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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