EPE Association: EPE 2001 - Topic 01d: Monolithic Power Integration

EPE 2001 - Topic 01d: Monolithic Power Integration
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01d: Monolithic Power Integration

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   1Chip Process of LDMOS and BiCMOS used for Battery Charger IC
By C. K. Jeon; J. J. Kim; Y. S. Choi; M. H. Kim; S. L. Kim; H. S. Kang; C. S. Song [View]
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Abstract: High Voltage LDMOS and control circuits have been integrated on the same chip which is a newly proposed 1-chip process for smart power IC with no epi. layer. This paper describes a uniquely designed layout and process architecture. When compared to 700V sustaining voltage and 0.55§Ùcm2 Ron,sp in conventional layout, the proposed LDMOS structure shows low specific on-resistance of 0.37§Ùcm2 and high breakdown voltage of 800V. And the method of effective ESD protection in LDMOS with senseFET was proposed.

   600V 2A Triac In Soi Substrates For Domestic Applications
By B. Giffard; B. Charlet; L. Clavelier; C. Buj-Dufournet; S. Gimonet; C. Anceau; F. Duclos; R. Pezzani; J-B. Quoirin [View]
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Abstract: Symmetric Thyristors (or TRIAC) are largely used in the mains AC voltage range. In this paper, this device is presented in a completely isolated structure on SOI (Silicon on Insulator) substrate. This approach opens the way to chips providing multiple AC switches for domestic applications.

   A New Monolithic Smart IGBT for Motor Control Application
By A. Alessandria; L. Fragapane; S. Musumeci [View]
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Abstract: This paper deals with a new power device that joins the characteristics of a fast-switching PowerMesh™ IGBT with some protection features. A driver circuit is integrated in the power device to implement over-current protection and soft thermal shutdown. A high-voltage collector-gate clamp is also provided to improve U.I.S. capability. The current limitation also ensures a highly short-circuit rated device. Moreover, the low threshold voltage and input current make it possible to drive the device directly from the output pin of a microprocessor. The static and dynamic behavior of the device will be illustrated and a case of application will be suggested.

   Design and optimization of MOS-thyristor structures ...
By M. Breil; J-L . Sanchez; P. Austin; J-P. Laur; J. Jalade; R. Pezzani; F. Duclos; M. Roy [View]
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Abstract: In this paper, two MOS-thyristor associations are investigated, optimized and designed to provide a di/dt active control capability required in specific applications. These devices combine the IGBT and thyristor behaviors, and allow to achieve a new power function, called IGTH. More precisely, these devices switch on in IGBT mode and have a fully latched low on-state voltage. The influence of the physical and technological parameters on the operation modes and on the main electrical characteristics has been analyzed using 2D numerical simulations, analytical calculations and circuit simulations based on specific physical models. Thus, each of these two integrated devices has been specifically designed for a light dimming application, which requires soft switching conditions in order to avoid EMI. Experimental results on a first fabricated test device are presented.

   Static Electrical Behaviour Of A Monolithic Power-Logic Association
By A. Dartigues; B. Giffard; R. Perret; C. Schaeffer; M. Roy; C. Anceau [View]
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Abstract: This paper deals with the static behaviour of a monolithic power-logic association : a MBS (Mos Bidirectional Switch) and its driver. Two analytical models of perturbations’ generation are briefly described. In the off-state, a capacitive model depicts with good results the perturbations generated by the MBS itself in negative polarization. Then a second modelling is proposed, which can simulate the parasitic gate voltage of the power transistor in the conduction mode. Using these two models, the key parameters of the perturbations’ level are listed. Among them, two are retained in order to discuss about the security area of the monolithic component. In addition, the consumption constraints are added, underlining the compromise that must be solved.

EPE 2001 - Topic 01d: Monolithic Power Integration
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01d: Monolithic Power Integration
	[return to parent folder]

	1Chip Process of LDMOS and BiCMOS used for Battery Charger IC By C. K. Jeon; J. J. Kim; Y. S. Choi; M. H. Kim; S. L. Kim; H. S. Kang; C. S. Song	[View] [Download]
Abstract: High Voltage LDMOS and control circuits have been integrated on the same chip which is a newly proposed 1-chip process for smart power IC with no epi. layer. This paper describes a uniquely designed layout and process architecture. When compared to 700V sustaining voltage and 0.55§Ùcm2 Ron,sp in conventional layout, the proposed LDMOS structure shows low specific on-resistance of 0.37§Ùcm2 and high breakdown voltage of 800V. And the method of effective ESD protection in LDMOS with senseFET was proposed.

	600V 2A Triac In Soi Substrates For Domestic Applications By B. Giffard; B. Charlet; L. Clavelier; C. Buj-Dufournet; S. Gimonet; C. Anceau; F. Duclos; R. Pezzani; J-B. Quoirin	[View] [Download]
Abstract: Symmetric Thyristors (or TRIAC) are largely used in the mains AC voltage range. In this paper, this device is presented in a completely isolated structure on SOI (Silicon on Insulator) substrate. This approach opens the way to chips providing multiple AC switches for domestic applications.

	A New Monolithic Smart IGBT for Motor Control Application By A. Alessandria; L. Fragapane; S. Musumeci	[View] [Download]
Abstract: This paper deals with a new power device that joins the characteristics of a fast-switching PowerMesh™ IGBT with some protection features. A driver circuit is integrated in the power device to implement over-current protection and soft thermal shutdown. A high-voltage collector-gate clamp is also provided to improve U.I.S. capability. The current limitation also ensures a highly short-circuit rated device. Moreover, the low threshold voltage and input current make it possible to drive the device directly from the output pin of a microprocessor. The static and dynamic behavior of the device will be illustrated and a case of application will be suggested.

	Design and optimization of MOS-thyristor structures ... By M. Breil; J-L . Sanchez; P. Austin; J-P. Laur; J. Jalade; R. Pezzani; F. Duclos; M. Roy	[View] [Download]
Abstract: In this paper, two MOS-thyristor associations are investigated, optimized and designed to provide a di/dt active control capability required in specific applications. These devices combine the IGBT and thyristor behaviors, and allow to achieve a new power function, called IGTH. More precisely, these devices switch on in IGBT mode and have a fully latched low on-state voltage. The influence of the physical and technological parameters on the operation modes and on the main electrical characteristics has been analyzed using 2D numerical simulations, analytical calculations and circuit simulations based on specific physical models. Thus, each of these two integrated devices has been specifically designed for a light dimming application, which requires soft switching conditions in order to avoid EMI. Experimental results on a first fabricated test device are presented.

	Static Electrical Behaviour Of A Monolithic Power-Logic Association By A. Dartigues; B. Giffard; R. Perret; C. Schaeffer; M. Roy; C. Anceau	[View] [Download]
Abstract: This paper deals with the static behaviour of a monolithic power-logic association : a MBS (Mos Bidirectional Switch) and its driver. Two analytical models of perturbations’ generation are briefly described. In the off-state, a capacitive model depicts with good results the perturbations generated by the MBS itself in negative polarization. Then a second modelling is proposed, which can simulate the parasitic gate voltage of the power transistor in the conduction mode. Using these two models, the key parameters of the perturbations’ level are listed. Among them, two are retained in order to discuss about the security area of the monolithic component. In addition, the consumption constraints are added, underlining the compromise that must be solved.