| Abstract |
This paper deals with the static behaviour of a monolithic power-logic association : a MBS
(Mos Bidirectional Switch) and its driver. Two analytical models of perturbations’ generation are
briefly described. In the off-state, a capacitive model depicts with good results the perturbations
generated by the MBS itself in negative polarization. Then a second modelling is proposed, which can
simulate the parasitic gate voltage of the power transistor in the conduction mode. Using these two
models, the key parameters of the perturbations’ level are listed. Among them, two are retained in
order to discuss about the security area of the monolithic component. In addition, the consumption
constraints are added, underlining the compromise that must be solved. |
