| Abstract |
In this paper, two MOS-thyristor associations are investigated, optimized and designed to
provide a di/dt active control capability required in specific applications. These devices combine
the IGBT and thyristor behaviors, and allow to achieve a new power function, called IGTH. More
precisely, these devices switch on in IGBT mode and have a fully latched low on-state voltage. The
influence of the physical and technological parameters on the operation modes and on the main
electrical characteristics has been analyzed using 2D numerical simulations, analytical calculations
and circuit simulations based on specific physical models. Thus, each of these two integrated devices
has been specifically designed for a light dimming application, which requires soft switching
conditions in order to avoid EMI. Experimental results on a first fabricated test device are presented. |
