EPE Association: EPE 2025 - LS1d: Active devices

EPE 2025 - LS1d: Active devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2025 - Conference > EPE 2025 - Topic 07: Semiconductor Devices and Packaging > EPE 2025 - LS1d: Active devices

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   400 V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI
By Ralf SIEMIENIEC, Martin WATTENBERG, Ertugrul KOCAAGA, Sriram JAGANNATH, Elvir KAHRIMANOVIC, Jyotshna BHANDARI, Heejae SHIM, Alberto PIGNATELLI [View]
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Abstract: The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC systems or 3-level topologies with typical input voltages ranging from 180 VAC to 350 VAC or 400 VDC to 600 VDC.The technology concept is presented, and its efficiency and power density gains are demonstrated through measurements on test boards representing a 3-level ANPC general purpose inverter and a 3-level FC PFC for highly-efficient power supplies.

   Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection
By Felix GESELE, Christian BÄUMLER, Thomas BASLER, Thomas BRÜCKNER [View]
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Abstract: This paper investigates the short-circuit behavior of SiC MOSFETs in a quasi series connection, which can be found in several topologies with three or more switches in a commutation loop. In the event of a device failure, this could offer the opportunity to select a device which had seen less stress up to this point to turn off the short circuit, and thus improve the (general) failure handling. Besides a theoretical analysis, short-circuit tests for such configurations are carried out with state-of-the-art 3.3-kV SiC MOSFET half-bridge modules. The analysis focuses particularly on the voltage distribution between the switches, examining the influence of different physical setups and device parameters.

   Silicon IGBT modules with voltage slopes higher than SiC modules
By Thomas ZOELS, Jorge MARI, Fabio CARASTRO [View]
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Abstract: This paper presents the issue of generating excessive dV/dt in standard medium voltage IGBT modules with PiN freewheel diodes. Two different application scenarios are discussed where the issue arises. A proposed modified double pulse test allows to investigate the phenomenon under controlled laboratory conditions. Power modules from two different manufacturers were characterized and the test results are presented. Finally, a comparison with an intermediate voltage SiC module is shown and relevant EMI considerations conclude the paper.

EPE 2025 - LS1d: Active devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2025 - Conference > EPE 2025 - Topic 07: Semiconductor Devices and Packaging > EPE 2025 - LS1d: Active devices
	[return to parent folder]

	400 V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI By Ralf SIEMIENIEC, Martin WATTENBERG, Ertugrul KOCAAGA, Sriram JAGANNATH, Elvir KAHRIMANOVIC, Jyotshna BHANDARI, Heejae SHIM, Alberto PIGNATELLI	[View] [Download]
Abstract: The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC systems or 3-level topologies with typical input voltages ranging from 180 VAC to 350 VAC or 400 VDC to 600 VDC.The technology concept is presented, and its efficiency and power density gains are demonstrated through measurements on test boards representing a 3-level ANPC general purpose inverter and a 3-level FC PFC for highly-efficient power supplies.

	Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection By Felix GESELE, Christian BÄUMLER, Thomas BASLER, Thomas BRÜCKNER	[View] [Download]
Abstract: This paper investigates the short-circuit behavior of SiC MOSFETs in a quasi series connection, which can be found in several topologies with three or more switches in a commutation loop. In the event of a device failure, this could offer the opportunity to select a device which had seen less stress up to this point to turn off the short circuit, and thus improve the (general) failure handling. Besides a theoretical analysis, short-circuit tests for such configurations are carried out with state-of-the-art 3.3-kV SiC MOSFET half-bridge modules. The analysis focuses particularly on the voltage distribution between the switches, examining the influence of different physical setups and device parameters.

	Silicon IGBT modules with voltage slopes higher than SiC modules By Thomas ZOELS, Jorge MARI, Fabio CARASTRO	[View] [Download]
Abstract: This paper presents the issue of generating excessive dV/dt in standard medium voltage IGBT modules with PiN freewheel diodes. Two different application scenarios are discussed where the issue arises. A proposed modified double pulse test allows to investigate the phenomenon under controlled laboratory conditions. Power modules from two different manufacturers were characterized and the test results are presented. Finally, a comparison with an intermediate voltage SiC module is shown and relevant EMI considerations conclude the paper.