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Silicon IGBT modules with voltage slopes higher than SiC modules
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| Author(s) |
Thomas ZOELS, Jorge MARI, Fabio CARASTRO |
| Abstract |
This paper presents the issue of generating excessive dV/dt in standard medium voltage IGBT modules with PiN freewheel diodes. Two different application scenarios are discussed where the issue arises. A proposed modified double pulse test allows to investigate the phenomenon under controlled laboratory conditions. Power modules from two different manufacturers were characterized and the test results are presented. Finally, a comparison with an intermediate voltage SiC module is shown and relevant EMI considerations conclude the paper. |
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| Filename: | 0053-epe2025-full-16312481.pdf |
| Filesize: | 960.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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